L. Wilde

TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications (2009)

Monaghan, S., Cherkaoui, K., O'Connor, E., Djara, V., Hurley, P.K., Oberbeck, L., ...

We provide the first report of the structural and electrical properties of TiN/ZrO2/Ti/Al metal-insulator-metal capacitor structures, where the ZrO2 thin film (7-8 nm) is deposited by ALD using the...

Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy (2009)

Weinreich, W., Wilde, L., Kücher, P., Lemberger, M., Yanev, V., Rommel, M., ...

Tunneling atomic force microscopy \'01TUNA\'02 is used to identify leakage current characteristics in SiO2 doped ZrO2 thin films within the nanometer scale. TUNA current maps and local TUNA I-V...

Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films (2009)

Weinreich, W., Reiche, R., Lemberger, M., Jegert, G., Müller, J., Wilde, L., ...

Polarity asymmetries in JSV and CSV characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr(1\'02x)AlxO2 films and TiN electrodes are evaluated. Physical analysis of the...

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices (2009)

Lanza, M., Porti, M., Nafria, M., Aymerich, X., Benstetter, G., Lodermeier, E., ...

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of...

Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers (2009)

Weinreich, W., Ignatova, V.A., Wilde, L., Teichert, S., Lemberger, M., Bauer, A.J., ...

The influence of the annealing atmosphere and temperature on the crystalline phase and composition of thin ZrO2 layers grown by atomic layer deposition on silicon is analyzed. These physical...

Properties of plasma-enhanced atomic layer deposition-grown tantalum carbonitride thin films (2009)

Hossbach, C., Teichert, S., Thomas, J., Wilde, L., Wojcik, H., Schmidt, D., ...

Tantalum carbonitride thin films were deposited by plasma-enhanced atomic layer deposition using the metallorganic precursor tert-butylimido tris (diethylamido) tantalum and hydrogen/argon direct...

Phase formation of rapidly quenched Cu - Si alloys (2007)

N. Mattern, R. Seyrich, L. Wilde, C. Baehtz, M. Knapp, ...

Journal article