A novel light-emitting structure for the 3-5 µm spectral range (2005)
Tomm, J.W., Weik, F., Glatthaar, R., Vetter, U., Nurnus, J., Lambrecht, A., ...
We present a novel hybrid light emitting device design based on a standard InAlGaAs/GaAs high-power laser diode array chip as a pump source and a narrow-gap PbS e-layer as active optical material....
Weik, F., Tomm, J.W., Glatthaar, R., Vetter, U., Szewczyk, D., Nurnus, J., ...
Midinfrared luminescence imaging spectroscopy is used for evaluating surface structures etched into narrow-gap PbSe films. These structures provide a luminescence enhancement by a factor of 6. On the...
Materials and structural design of a mid-infrared light-emitting device (2004)
Weik, F., Tomm, J.W., Glatthaar, R., Vetter, U., Szewczyk, D., Nurnus, J., ...
An optically pumped emitter for the mid-infrared region around 4 ým based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 µm and the radiation is...
Oxidation of silicon carbide: Problems and solutions (2002)
Electron transport near oxidized SiC surfaces appears to be significantly deteriorated by interface defects. In contrast to oxidized Si, the SiC/oxide interface imperfections expose a remarkable...
Afanas'eva, VV, Stesmans, Andre; U0014266, Bassler, M, Pensl, G, Schulz, MJ
Katholieke Universiteit Leuven, Faculteit Wetenschappen, Departement Natuurkunde en Sterrenkunde, Celestijnenlaan 200D, 3001 Leuven
Shallow electron traps at the 4H-SiC/SiO2 interface (2000)
Stesmans, Andre; U0014266, Bassler, M, Pensl, G, Schulz, MJ
Low-temperature electrical measurements and photon-stimulated electron tunneling experiments reveal the presence of a high density of interface states at around 0.1 eV below the conduction band of...
SiC/SiO2 interface-state generation by electron injection (1999)
Stesmans, Andre; U0014266, Bassler, M, Pensl, G, Schulz, MJ, Harris, CI
Generation of interface states caused by electron injection in n- and p-type (3C, 4H, 6H)-SiC/ SiO2/metal structures was studied using photoinjection methods. The charge trapping in the oxides on SiC...
Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-azone cleaning (1996)
Afanasev, VV, Stesmans, A, Bassler, M, Pensl, G, Schulz, MJ, Harris, CI
The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic...
Electrical properties of silicon carbide polytypes (1996)
Pensl, G., Afanasev, V.V., Bassler, M., Schadt, M., Troffer, T., Heindl, J., ...
It is demonstrated that SiC can be doped with boron and aluminum by ion implantation. Based on our Hall effect data, an optimal electrical activity of these dopants is reached at annealing...
Bassler, M., Frank, U., Spillner, G., Schlosser, V., Daschner, F.
Twenty-nine adult patients undergoing open-heart surgery were given 2 g cefotaxime as 5 min intravenous bolus injection preoperatively. Within 6 h cefotaxime serum concentrations declined from 81.0...
Daschner, F. D., Langmaack, H., Bassler, M., Wais, U.
We investigated the effect of Sch 29482 (SCH) on a serum-sensitive Escherichia coli and a serum-resistant strain of Acinetohacter anitratus in serum, broth and in combination with human...