Minkevich, A.A., Baumbach, T., Gailhanou, M., Thomas, O.
Physical Review B, 78(2008) S.174110/1-8
Minkevich, A. A., Gailhanou, M., Charlet, B., Chamard, V., Thomas, O.
The displacement field in highly non uniformly strained crystals is obtained by addition of constraints to an iterative phase retrieval algorithm. These constraints include direct space density...
Structure of smectic defect cores: X-ray study of 8CB liquid crystal ultra-thin films (2005)
Lacaze, E., Goldmann, Michel, Gailhanou, M., De Boissieu, M., Alba, M.
Grazing incidence XAFS spectroscopy of uranyl sorbed onto TiO2 rutile surfaces (2003)
Den Auwer, C., Drot, R., Simoni, E., D. Conradson, S., Gailhanou, M.
The surface complex formed by uranyl oxocations sorbed onto rutile titanium oxide has been probed by X-ray Absorption Spectroscopy. These measurements are part of a work that aims to model the...
Grazing incidence XAFS spectroscopy of uranyl sorbed onto TiO2 rutile surfaces (2003)
Den Auwer, C., Drot, R., Simoni, E., D. Conradson, S., Gailhanou, M.
The surface complex formed by uranyl oxocations sorbed onto rutile titanium oxide has been probed by X-ray Absorption Spectroscopy. These measurements are part of a work that aims to model the...
Baumbach, T., Lübbert, D., Gailhanou, M.
The surface shape and the spatial distribution of strain in GaInAs/InP multilayer gratings is experimentally determined by combining high-resolution x-ray diffraction and grazing-incidence...
Strain Relaxation in Surface Nano-Structures Studied by X-Ray Diffraction Methods (2000)
Baumbach, T., Lübbert, D., Gailhanou, M.
We study the lattice strain relaxation in pseudomorphic surface gratings using high resolution X-ray diffraction and elasticity theory. Symmetrical and asymmetrical X-ray diffraction gives evidence...
Strain Relaxation in Surface Nano-Structures Studied by X-Ray Diffraction Methods (1999)
Baumbach, T., Lübbert, D., Gailhanou, M.
We study the lattice strain relaxation in pseudomorphic surface gratings using high resolution X-ray diffraction (XRD), grazing incidence diffraction and elasticicty theory. Ba means of grazing...
Baumbach, T., Lübbert, D., Gailhanou, M.
Single and multilayer surface gratings of the system GaInAs/InP are studied by x-ray diffraction reciprocal space mapping. From the diffraction data we determine the gratting period and shape, the...
Mi, J., Warren, P., Gailhanou, M., Ganiere, J. D., Dutoit, M., Jouneau, P. H., ...
High quality pseudomorphic Si1-yCy and Si1-x-yGexCy layers were grown on (100) Si between 530 and 650 degrees C by rapid thermal chemical vapor deposition in the SiH4/GeH4/SiH3CH3/H-2 system. These...
Mi, J., Letourneau, P., Ganiere, J. D., Gailhanou, M., Dutoit, M., Dubois, C., ...
Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three...
Ultra-high finesse microcavity with distributed Bragg reflectors (1994)
Stanley, R.P., Houdré, R., Oesterle, U., Gailhanou, M., Ilegems, M.
Molecular beam epitaxy growth of an ultrahigh finesse microcavity (1994)
Oesterle, U., Stanley, R.P., Houdré, R., Gailhanou, M., Ilegems, M.
Ky, N. H., Ganiere, J. D., Gailhanou, M., Blanchard, B., Pavesi, L., Burri, G., ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by...
Growth of GaInAs(P) and GaInAsP/GaInAs MQW structures by CBE (1992)
Rudra, A, Carlin, JF, Ruterana, P, Gailhanou, M, Staehli, JL, Ilegems, M
Ky, N. H., Ganiere, J. D., Gailhanou, M., Moriergenoud, F., Martin, D., Reinhart, F. K.
GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and...
Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe (1992)
Rudra, A., Carlin, J. F., Ruterana, P., Gailhanou, M., Staehli, J. L., Ilegems, M.
We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs...
Analysis of DBE grown GaInAsP/InP heterostructures for 1.55 mu m lasers (1991)
Gailhanou, M, Goldstein, L, Buffat, PA, Brosson, P, Fernier, B, Benoit, J
Houdre, R., Gueissaz, F., Gailhanou, M., Ganiere, J. D., Rudra, A., Ilegems, M.
The indium desorption rates from InGaAs and InAlAs grown on InP substrates have been measured by wedge transmission electron microscopy as a function of the growth temperature. Desorption becomes...