Next-generation Process Management with ADEPT2 (Demo Paper) (2007)
Göser, K., Jurisch, M., Acker, H., Kreher, U., Lauer, M., Rinderle, S.B., ...
Short time-to-market, easy adaptation to changes in business environment, and robustness of processes are key requirements in today’s business world. In the IT area of Business Process Management...
ADEPT2 - Next Generation Process Management Technology (2007)
Dadam, P., Reichert, M.U., Rinderle, S.B., Jurisch, M., Acker, H., Göser, K., ...
If current process management systems shall be applied to a broad spectrum of applications, they will have to be significantly improved with respect to their technological capabilities. In...
On Deriving Net Change Information From Change Logs – The DELTALAYER-Algorithm. (2007)
Rinderle, S.B., Jurisch, M., Reichert, M.U.
The management of change logs is crucial in different areas of information systems like data replication, data warehousing, and process management. One barrier that hampers the (intelligent) use of...
On Representing, Purging, and Utilizing Change Logs in Process Management Systems (2006)
Rinderle, S.B., Reichert, M.U., Jurisch, M., Kreher, U.
In recent years adaptive process management technolgy has emerged in order to increase the flexibility of business process implementations and to support process changes at different levels. Usually,...
ADEPT2 – Ein adaptives Prozess-Management-System der nächsten Generation. (2006)
Dadam, P., Acker, H., Göser, K., Jurisch, M., Kreher, U., Lauer, M., ...
Prozess-Management-Systeme müssen gegenüber dem heutigen Stand der Technik erheblich leistungsfähiger werden, um für ein wirklich breites Anwendungsspektrum einsetzbar zu sein: Neue Prozesse...
Investigation of residual dislocations in VGF-grown Si-doped GaAs (2005)
Birkmann, B., Stenzenberger, J., Jurisch, M., Härtwig, J., Alex, V., Müller, G.
Wellmann, P.J., Albrecht, A., Künecke, U., Birkmann, B., Müller, G., Jurisch, M.
We present an optical technique based on absorption measurements for the determination of the charge carrier concentration and its lateral distribution in n-type doped GaAs wafers. Calibration plots...
Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs (2002)
Steinegger, T., Gründig-Wendrock, B., Baeumler, M., Jurisch, M., Jantz, W., Niklas, J.
Further evidence was found that the 0.8 eV luminescence band in GaAs is correlated to the EL6 defect as identified by photo induced current transient spectroscopy (PICTS). From luminescence...
Quantitative topographic assessment of Cu incorporation in GaAs (2000)
Baeumler, M., Stibal, R., Stolz, W., Steinegger, T., Jurisch, M., Maier, M., ...
The modification of the bulk resistivity of semi-insulating GaAs caused by incorporation of copper has been studied. Wafers cut from an ingot annealed, intentionally Cu contaminated LEC grown crystal...
Non-destructive testing of damage layers in GaAs wafers by surface acoustic waves (1999)
Schneider, D., Hammer, R., Jurisch, M.
Slicing of GaAs wafers from ingots produces a damage layer that has to be completely removed by polishing. A non-destructive control of the machining process is desirable. Laser induced surface...
High resolution EL2 and resistivity topography of Si GaAs wafers (1999)
Wickert, M., Stibal, R., Hiesinger, P., Jantz, W., Wagner, J., Jurisch, M., ...
The mesoscopic inhomogencity of LEC grown semi-insulating (SI) GaAs wafers has been investigated with EL20 absorption topography (EAT), photoluminescence topography (PLT), point contact topography...