Yang, A., Steger, M., Sekiguchi, T., Thewalt, M. L. W., Ladd, T. D., Itoh, K. M., ...
We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the...
Optical detection and ionization of donors in specific electronic and nuclear spin states (2006)
Yang, A., Steger, M., Karaiskaj, D., Thewalt, M. L. W., Cardona, M., Itoh, K. M., ...
We resolve the remarkably sharp bound exciton transitions of highly enriched Si-28 using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy....
Effects of sulfur isotopic composition on the band gap of PbS (2006)
Lian, H. J., Yang, A., Thewalt, M. L. W., Lauck, R., Cardona, M.
Low temperature photoluminescence spectra of synthetic PbS crystals having the natural isotopic abundance (95% S-32) are compared with crystals grown using 99% S-34. An anomalous decrease in the band...
Progress in Semiconductor Spectroscopy Using Isotopically Enriched Si (2005)
Thewalt, M. L. W., Meyer, T. A., Karaiskaj, D., Cardona, M., Haller, E. E., Ager III, J. W., ...
High-purity, isotopically enriched bulk silicon (2004)
Ager III, J.W., Beeman, J.W., Hansen, W.L., Haller, E.E., Sharp, I.D., Liao, C., ...
Sulfur isotope effects on the excitonic spectra of CdS (2004)
Meyer, T. A., Thewalt, M. L. W., Cardona, M., Lauck, R.
The energies of bound excitons, as well as free excitons associated with the A, B, and C valence band edges, are compared using both photoluminescence spectroscopy and reflectivity spectroscopy for...
Temperature dependence of the energy gap of semiconductors in the low-temperature limit (2004)
Cardona, M., Meyer, T. A., Thewalt, M. L. W.
The temperature dependence of the electronic states and energy gaps of semiconductors is an old but still important experimental and theoretical topic. Remarkably, extant results do not clarify the...
Photoluminescence studies of isotopically enriched silicon (2003)
Karaiskaj, D., Thewalt, M. L. W., Ruf, T., Cardona, M.
We report the first high resolution photoluminescence studies of isotopically pure silicon. New information is obtained on isotopic effects on the indirect band gap energy, phonon energies, and...
Origin of the residual acceptor ground-state splitting in silicon (2003)
Karaiskaj, D., Kirczenow, G., Thewalt, M. L. W., Buczko, R., Cardona, M.
The residual ground-state splitting of acceptors in high- quality silicon has been studied intensely by different experimental techniques for several decades. Recently, photoluminescence studies of...
Impurity absorption spectroscopy in 28Si: The importance of inhomogeneous isotope broadening (2003)
Karaiskaj, D., Stotz, J. A. H., Meyer, T., Thewalt, M. L. W., Cardona, M.
The Acceptor Ground State Splitting in Silicon (2003)
Karaiskaj, D., Kirzcenow, G., Thewalt, M. L. W., Buczko, R., Cardona, M., Ruf, T.
Impurity Absorption Spectroscopy in 28Si: The Importance on Inhomogeneous Isotope Broadening (2003)
Karaiskaj, D., Stotz, J. A. H., Meyer, T., Thewalt, M. L. W., Cardona, M.
Karaiskaj, D., Thewalt, M. L. W., Ruf, T., Cardona, M., Konuma, M.
We have performed high-resolution photoluminescence spectroscopy on silicon crystals with different isotopic composition and investigated the effects of this composition on the indirect electronic...
"Intrinsic" acceptor ground state splitting in silicon: An isotopic effect (2002)
Karaiskaj, D., Thewalt, M. L. W., Ruf, T., Cardona, M., Konuma, M.
One of the oldest open questions in semiconductor physics is the origin of the small splittings of the neutral acceptor ground state in silicon which lead to a distribution of doublet splittings...