M. Lemberger

Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy (2009)

Weinreich, W., Wilde, L., Kücher, P., Lemberger, M., Yanev, V., Rommel, M., ...

Tunneling atomic force microscopy \'01TUNA\'02 is used to identify leakage current characteristics in SiO2 doped ZrO2 thin films within the nanometer scale. TUNA current maps and local TUNA I-V...

Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition (2009)

Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., ...

A broad compositional range of the dielectric material Zr1-xHfxO2 was evaluated with respect to its applicability in DRAM storage capacitors. The paper reports on phase composition, crystallization...

Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films (2009)

Weinreich, W., Reiche, R., Lemberger, M., Jegert, G., Müller, J., Wilde, L., ...

Polarity asymmetries in JSV and CSV characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr(1\'02x)AlxO2 films and TiN electrodes are evaluated. Physical analysis of the...

Influence of the amorphous/crystalline phase of Zr1-xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks (2009)

Pakaleva, A., Lemberger, M., Bauer, A.J., Weinreich, W., Heitmann, J., Erben, E., ...

Influence of N2 and NH3 annealing on the nitrogen incorporation and k-value of thin ZrO2 layers (2009)

Weinreich, W., Ignatova, V.A., Wilde, L., Teichert, S., Lemberger, M., Bauer, A.J., ...

The influence of the annealing atmosphere and temperature on the crystalline phase and composition of thin ZrO2 layers grown by atomic layer deposition on silicon is analyzed. These physical...

Search for future high-k dielectrics, boundary conditions and examples (2009)

Bauer, A.J., Lemberger, M., Erlbacher, T., Weinreich, W.

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics (2008)

Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., ...

Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy (2008)

Paskaleva, A., Yanev, V., Rommel, M., Lemberger, M., Bauer, A.J.

In this work, tunneling atomic force microscopy (TUNA) is used to describe the charge trapping in high-k ZrO2 dielectric stacks at nanoscale dimensions by analyzing the alteration of the I-V curves...

High-k: Latest developments and perspectives (2008)

Bauer, A.J., Lemberger, M., Erlbacher, T., Weinreich, W.

HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)

Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.

The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...

Evaluation of MOCVD grown niobium nitride films as gate electrode for advanced CMOS technology (2008)

Thiede, T., Parala, H., Reuter, K., Passing, G., Kirchmeyer, S., Hinz, J., ...

HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)

Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.

The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics (2008)

Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., ...

High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous...

Stress induced leakage current mechanism in thin Hf-silicate layers (2007)

Paskaleva, A., Lemberger, M., Bauer, A.J.

MOCVD of TaN Using the All-Nitrogen-Coordinated Precursors [Ta(NEtMe)3(N-tBu)], [Ta(NEtMe)(N-tBu){C(N-iPr)2(NEtMe)}2] and [Ta(NMeEt)2(N-tBu){Me2N-N(SiMe3)}] (2007)

Baunemann, A., Lemberger, M., Bauer, A.J., Parala, H., Fischer, R.A.

Three different all nitrogen-coordinated heteroleptic precursors, [Ta(NEtMe)3(N-tBu)] (1), [Ta(NEtMe)(N-tBu){C(N-iPr)2-(NEtMe)}2] (2), and [Ta(NMeEt)2(N-tBu)(tdmh)] (3) (Et = ethyl, Me = methyl, tBu...

MOCVD of hafnium silicate films obtained from a single-source precursor on silicon and germanium for gate-dielectric applications (2007)

Lemberger, M., Schön, F., Dirnecker, T., Jank, M.P.M., Frey, L., Ryssel, H., ...

In this work, hafnium silicate layers on Si and Ge wafers for gate dielectric application in metal-oxide-semiconductor devices are investigated. Films are deposited by metal-organic (MO)CVD using the...

Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors (2007)

Lemberger, M., Baunemann, A., Bauer, A.J.

MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications (2007)

Lemberger, M., Thiemann, S., Baunemann, A., Parala, H., Fischer, R.A., Hinz, J., ...

Tantalum nitride films obtained by MOCVD using a tert-butylimido-tris-ethylmethylamido-tantalum (TBTEMT, Ta(NCMe3)(NEtMe)(3)) compound were physically and electrically investigated. Lowest...

Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers (2007)

Paskaleva, A., Lemberger, M., Bauer, A.J.

Verification of grain boundaries in annealed thin ZrO2 films by electrical AFM technique: Poster at E-MRS Fall Meeting, September 17-21 2007, Warsaw (2007)

Yanev, V., Paskaleva, A., Weinreich, W., Lemberger, M., Petersen, S., Rommel, M., ...

Verification of grain boundaries in annealed thin ZrO2 films by electrical AFM technique: Poster at E-MRS Fall Meeting, September 17-21 2007, Warsaw (2007)

Yanev, V., Paskaleva, A., Weinreich, W., Lemberger, M., Petersen, S., Rommel, M., ...

Correlation between defects, leakage currents and conduction mechanisms in thin high-k dielectric layers (2006)

Paskaleva, A., Atanassova, E., Lemberger, M., Bauer, A.J.

Results on leakage currents and conduction mechanisms in various high-k dielectric layers (Zr-, Hf-, HfTi-silicates and Ta2O5) are presented. It is demonstrated that small alteration of the...

Stress induced leakage currents and charge trapping in thin Zr- and Hf-silicate layers (2006)

Paskaleva, A., Lemberger, M., Bauer, A.J.

MOCVD of conductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine (2005)

Kim, Y., Parala, H., Bauer, A.J., Lemberger, M., Baunemann, A., Fischer, R.A.

Characterization of interface state densities by photocurrent analysis: Comparison of results for different insulator layers (2005)

Rommel, M., Groß, M., Ettinger, A., Lemberger, M., Bauer, A.J., Frey, L., ...

In this work, silicon insulator interfaces are characterized by detailed photocurrent analysis. Results obtained for a variety of samples with different insulator layers and layer thicknesses are...

MOCVD of cunductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine (2005)

Kim, Y., Parala, H., Bauer, A.J., Lemberger, M., Baunemann, A., Fischer, R.A.

High-k hafnium silicate films on silicon and germanium wafers by MOCVD using a single-source precursor (2005)

Lemberger, M., Schön, F., Dirnecker, T., Jank, M.P.M., Paskaleva, A., Bauer, A.J., ...

Thin Hf(x)Ti(y)Si(z)O films with varying Hf to Ti contents as candidates for high-k dielectrics (2005)

Bauer, A.J., Paskaleva, A., Lemberger, M., Frey, L., Ryssel, H.

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor (2005)

Lemberger, M., Paskaleva, A., Zurcher, S., Bauer, A.J., Frey, L., Ryssel, H.

Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf(x)Ti(y)Si(z)O films (2005)

Paskaleva, A., Bauer, A., Lemberger, M.

An asymmetry of conduction mechanisms and charge trapping in thin high-k Hf(x)Ti(y)Si(z)O films (2005)

Paskaleva, A., Bauer, A.J., Lemberger, M.

Electrical properties and conduction mechanism in Hf(x)Ti(y)Si(z)O films obtained from novel MOCVD precursors (2004)

Paskaleva, A., Lemberger, M., Zürcher, S., Bauer, A.J.

Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors (2004)

Lemberger, M., Paskaleva, A., Zurcher, S., Bauer, A.J., Frey, L., Ryssel, H.

Different current conduction mechanisms through thin high-k Hf(x)Ti(y)Si(z)O films due to the varying Hf to Ti ratio (2004)

Paskaleva, A., Bauer, A.J., Lemberger, M., Zurcher, S.

We have investigated the electrical behavior of high permittivity (high-k) hafnium-titanium-silicate (HfxTiySizO) layers with different Hf:Ti ratios in the films. The films are prepared by...

Hafnium titanium silicate high-k dielectric films deposited by MOCVD using novel single source precursors (2003)

Zürcher, S., Morstein, M., Lemberger, M., Bauer, A.J.

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors (2003)

Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.

Zirconium silicate films obtained from novel MOCVD precursors (2003)

Lemberger, M., Paskaleva, A., Zürcher, S., Bauer, A.J., Frey, L., Ryssel, H.

New single-source precursors for the MOCVD of high-kappa dielectric zirconium silicates to replace SiO2 in semiconducting devices (2002)

Zürcher, S., Morstein, M., Spencer, N.D., Lemberger, M., Bauer, A.

Two new single-source zirconium silicate precursors Zr(acac)(2)(OSiMe3)(2) A, and Zr(acac)(2)((OSiBuMe2)-Bu-t)2 B, have been synthesized. The stability and vapor pressure of the two compounds were...

Electrical reliability aspects of through the gate implanted MOS-structures with thin oxides (2001)

Jank, M., Lemberger, M., Bauer, A.J., Frey, L., Ryssel, H.

Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides (2000)

Jank, M.P.M., Lemberger, M., Frey, L., Ryssel, H.

For characterization of oxide damage created by through the gate implantation (TGI) of boron, we prepared samples that allowed us to investigate reliability degradation and intrinsic electron trap...