M. Reinelt

Details der Publikationsliste

Zeitraum

1981 - 2009

Anzahl

34

Co-Autoren

THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON (1981)

Reinelt, M., Kalbitzer, S.

The diffusion of K, Rb, and Cs has been studied by implantation of low energy ions into a-Si and using high-resolution Rutherford backscattering for measurement of the resulting profiles. The...

THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON (1981)

Reinelt, M., Kalbitzer, S.

The diffusion of K, Rb, and Cs has been studied by implantation of low energy ions into a-Si and using high-resolution Rutherford backscattering for measurement of the resulting profiles. The...

THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON (1981)

Reinelt, M., Kalbitzer, S.

The diffusion of K, Rb, and Cs has been studied by implantation of low energy ions into a-Si and using high-resolution Rutherford backscattering for measurement of the resulting profiles. The...

THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON (1981)

Reinelt, M., Kalbitzer, S.

The diffusion of K, Rb, and Cs has been studied by implantation of low energy ions into a-Si and using high-resolution Rutherford backscattering for measurement of the resulting profiles. The...

THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON (1981)

Reinelt, M., Kalbitzer, S.

The diffusion of K, Rb, and Cs has been studied by implantation of low energy ions into a-Si and using high-resolution Rutherford backscattering for measurement of the resulting profiles. The...