Antimicrobial and wound healing activities of leaves of Alternanthera sessilis Linn (2008)
Jalalpure, SS, Agrawal, N, Patil, M, Chimkode, R, Tripathi, A
De Lepeleore, I, Boyle, J.E., ...
Agrawal, N, Pallos, J, Slepko, N, Apostol, B L, Bodai, L, Chang, L W, ...
We explore the hypothesis that pathology of Huntington's disease involves multiple cellular mechanisms whose contributions to disease are incrementally additive or synergistic. We provide evidence...
Significance Of 30 KD Protein As A Diagnostic Marker In CSF Of tuberculour Meningits (2001)
Kashyap, R, Biswas, S, Agrawal, N, Chandak, N, Purohit, H, Taori, G, ...
Integration of guided wave devices for very high bitrates (1997)
Integration of key guided wave devices using InP technology for very high bit-rate systems such as laser/modulator, add/drop multiplexer, and photoreceiver is discussed. In this paper we consider...
Integrated optics for high bit-rate systems (1997)
Agrawal, N., Jahn, E., Pieper, W.
Integration of key guided wave optical devices using InP technology for all-optical signal processing in high bit-rate TDM systems such as demultiplexers and add/drop multiplexers is discussed.
Optical time-domain demultiplexing techniques using semiconductor laser amplifiers (1996)
Weber, H.G., Agrawal, N., Ehrhardt, A., Ehrke, H.J., Eiselt, M., Jahn, E., ...
The paper reports on optical time-domain demultiplexing experiments using the techniques of cross-phase modulation and four-wave mixing in semiconductor laser amplifiers. Both techniques promise...
Agrawal, N., Jahn, E., Pieper, W.
Optical signal processing using monolithically integrated semiconductor laser amplifier (SLA) structures will play an important role in future optical networks. In this paper we focus on the...
Jahn, E., Agrawal, N., Pieper, W.
In this paper we investigate, for the first time, gain and phase dynamics in semiconductor laser amplifier (SLA) based monolithically integrated asymmetric Mach Zehnder interferometers (MZIs) by...
Agrawal, N., Jahn, E., Pieper, W.
We report on the development and applications of integrated nonlinear interferometers including both Sagnac and Mach-Zehnder configurations for optical time division multiplexing systems. Details on...
Jahn, E., Agrawal, N., Pieper, W., Franke, D., Weber, H.G., ...
A Sagnac interferometer consisting of a semiconductor laser amplifier and a 3 dB coupler monolithically integrated within a waveguide loop mirror is fabricated and its app
Monolithically integrated nonlinear interferometers for all-optical switching (1996)
Jahn, E., Agrawal, N., Pieper, W., Franke, D., Furst, W., ...
We report on the development of monolithically integrated InGaAsP active/passive waveguide interferometers for all-optical switching including both Sagnac and Mach-Zehnder configurations.
Ludwig, R., Pieper, W., Jahn, E., Agrawal, N., Ehrhardt, A., Kuller, L., ...
Summary form only given. In conclusion, we performed a 40 Gbit/s, 100-km transmission experiment including demultiplexing from 40 Gbit/s to 10 Gbit/s by using a mode-locked semiconductor laser...
Jahn, E., Agrawal, N., Pieper, W., Franke, D., Furst, W., ...
A Sagnac interferometer consisting of a semiconductor laser amplifier and a 3 dB coupler monolithically integrated within a waveguide loop mirror is fabricated and its application as a 20 Gbit/s...
Ludwig, R., Ehrhardt, A., Pieper, W., Jahn, E., Agrawal, N., ...
A 40 Gbit/s time-division multiplexed signal was demultiplexed to 10 Gbit/s using a single modelocked semiconductor laser as the clock source. The pulses of the laser directly control an all-optical...
Jahn, E., Agrawal, N., Ludwig, R., Pieper, W., Weber, H.G.
The authors report the operation of a recently developed, monolithically integrated asymmetric Mach-Zehnder interferometer with two semiconductor laser amplifiers as a 20 Gbit/s add/drop multiplexer...
Jahn, E., Agrawal, N., Arbert, M., Franke, D., Ludwig, R., ...
We demonstrate all-optical error-free demultiplexing of 10, 20 and 40 Gbit/s to 5 Gbit/s by using a monolithically integrated Mach-Zehnder interferometer with two semiconductor laser amplifiers.
Jahn, E., Agrawal, N., Arbert, M., Franke, D., Ludwig, R., ...
The authors demonstrate all-optical error-free demultiplexing of 10, 20 and 40 Gbit/s to 5 Gbit/s data signals by using a monolithically integrated Mach-Zehnder interferometer with two semiconductor...
Fast 2*2 Mach-Zehnder optical space switches using InGaAsP-InP multiquantum-well structures (1995)
Agrawal, N., Weinert, C.M., Mekonnen, G.G., Franke, D., Bornholdt, C., ...
We report fast 2*2 Mach-Zehnder optical space switches by using quantum confined Stark effect in InGaAsP-InP multiquantum-well structures that are ultracompact, require low voltages, and employ a...
A three-dimensional finite difference method scheme for simulation of multimode interference couplers with arbitrary waveguide cross section is presented. With this method we investigate the...
A self-consistent finite difference method for the simulation of electron transfer structures is developed and applied to optimize InGaAsP/InP QW structures for fast optical switching devices....
We report ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures with time constants on the order of 1 picosecond. This should be compared with the...
2*2 optical space switches using InGaAsP/InP MQW structures for 10-GHz applications (1994)
Agrawal, N., Franke, D., Weinert, C.M., Bornholdt, C.
Summary form only given. In this paper we demonstrate InGaAsP-InP MQW 2*2 optical space switches that show excellent dc switching performance and are capable of operation at and beyond 10 GHz. Both...
A self-consistent finite difference method for the simulation of quantum well electron transfer structures is developed and applied to optimize InGaAsP/InP/InAlAs structures for fast optical...
Ultrafast graded-gap electron transfer optical modulator structure (1994)
We demonstrate an ultrafast graded-gap electron transfer optical modulator structure with electron escape times on the order of 1 ps. All other aspects important for high-speed applications, for...
Reier, F.W., Jahn, E., Agrawal, N., Harde, P., Grote, N.
Doping properties of undoped and Zn-doped In(Ga)AlAs layers grown lattice-matched on InP by low-pressure metalorganic vapour phase epitaxy (MOVPE) were investigated. In non-intentionally doped...
Reier, F.W., Agrawal, N., Harde, P., Bochnia, R.
Acceptor incorporation with sharp doping interfaces is required for a variety of long wavelength optoelectronic devices. However, relatively strong diffusion effects are observed in the InGaAsP...
Agrawal, N., Reier, F.W., Bornholdt, C., Weinert, C.M., Li, K.C., Harde, P., ...
We report substantial progress in the growth of multi-quantum-well electron transfer optical modulator structures by metalorganic vapor phase epitaxy, which is made possible as a consequence of the...
Agrawal, N., Franke, D., Grote, N., Reier, F.W., Schroeter-Janssen, H.
The authors report on MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices, which require abrupt...
Agrawal, N., Hoffmann, D., Franke, D., Li, K.C.
Recently, a novel optical modulator heterostructure has been introduced based on voltage controlled electron transfer from a reservoir to a closely spaced quantum well. It has proven to exhibit large...
Agrawal, N., Hoffmann, D., Franke, D., Li, K.C., Clemens, U., Witt, A., ...
The authors demonstrate for the first time electro-optic modulation due to voltage controlled phase space filling by electron transfer in modulation doped MOVPE grown InGaAsP/InP multiple quantum...