Weinreich, W., Wilde, L., Kücher, P., Lemberger, M., Yanev, V., Rommel, M., ...
Tunneling atomic force microscopy \'01TUNA\'02 is used to identify leakage current characteristics in SiO2 doped ZrO2 thin films within the nanometer scale. TUNA current maps and local TUNA I-V...
Shariq, A., Mutas, S., Wedderhoff, K., Klein, C., Hortenbach, H., Teichert, S., ...
Atom Probe Tomography (APT) consists of analyzing a needle-shaped specimen on an atom-by-atom basis. In recent years, instruments have become commercially available, enabling the sequential analysis...
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition (2009)
Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., ...
A broad compositional range of the dielectric material Zr1-xHfxO2 was evaluated with respect to its applicability in DRAM storage capacitors. The paper reports on phase composition, crystallization...
Physical and electrical characterization of high-k ZrO2 metal-insulator-metal capacitor (2008)
Kim, J.-H., Ignatova, V.A., Kücher, P., Heitmann, J., Oberbeck, L., Schröder, U.
The effect of the deposition temp. and layer thickness on the phys. and elec. properties of ZrO2-based high-k metal-insulator-metal (MIM) capacitors was studied. The increasing thickness of ZrO2...
Novel enhanced stressors with graded encapsulated SiGe embedded in the source and drain areas (2008)
Naumann, A., Kronholz, S., Mowry, A., Ostermay, I., Bierstedt, H., Trui, B., ...
An advanced CMOS scheme for the integration of a graded epitaxial Silicon Germanium (SiGe) layer is presented. SiGe is deposited into the source drain regions right after gate formation to create...
Electrochemical Cu deposition in sub-100-nm interconnects: Results for a new model (2008)
Liske, R., Preusse, A., Wehner, S., Kücher, P., Bartha, J.W.
Nano-Raman: Monitoring nanoscale stress (2007)
Uhlig, B., Zollondz, J.-H., Haberjahn, M., Bloess, H., Kücher, P.
Due to the new challenges accompanying every new shrink node in semiconductor industry new materials have to be implemented or device design has to be adapted - both to realize the intended device...