Hard Carbon Coatings for IR-Optical Components, (9999)
Bubenzer,A., Dischler,B., Koidl,P.
Hydrogenated amorphous carbon films (a-C:H) were deposited on glass, silicon and germanium substrates. The films are transparent in the IR and are extremely hard. The a-C:H films were homogeneously...
Diamond components with integrated abrasion sensor for tribological applications (2007)
Pernice, W., Obloh, H., Müller-Sebert, W., Wild, C., Koidl, P., Urban, G.
Tribological components made from CVD diamond are commonly used for protection against abrasion in rough environments. Such components can be used e.g. in textile industry as thread guiding devices...
Quantum-well infrared photodetector with voltage-switchable quadratic and linear response (2006)
Maier, T., Schneider, H., Liu, H.C., Walther, M., Koidl, P.
We present a quantum-well infrared photodetector that allows us to switch between a quadratic and a linear detection mode. We employ an asymmetric detector design where intersubband transitions in a...
Diamond loudspeaker cones for high-end audio components (2006)
Woerner, E., Wild, C., Müller-Sebert, W., Koidl, P., Bankewitz, A.
Conventional loudspeaker membranes made of metal or synthetic material such as fabric, ceramics or plastics suffer from nonlinearities and cone breakup modes at fairly low audio frequencies. Due to...
Crystallographic anisotropy of wear on a polycrystalline diamond surface (2006)
El-Dasher, B.S., Gray, J.J., Tringe, J.W., Biener, J., Hamza, A.V., Wild, C., ...
We correlate topography and diffraction measurements to demonstrate that grain orientation profoundly influences polishing rates in polycrystalline diamond synthesized by chemical vapor deposition....
Domain pinning in GaAs/AlGaAs quantum well infrared photodetectors (2006)
Schneider, H., Schönbein, C., Rehm, R., Walther, M., Koidl, P.
We have analyzed the spatial distribution of electric field domains induced by negative differential photoconductivity in n-type GaAs/AlGaAs quantum well infrared photodetectors. We find strong...
Diamond ablators for inertial confinement fusion (2006)
Biener, J., Mirkarimi, P.B., Tringe, J.W., Baker, S.L., Wang, Y., Kucheyev, S.O., ...
Diamond has a unique combination of physical properties for the inertial confinement fusion ablator application, such as appropriate optical properties, high atomic density, high yield strength, and...
High temperature infrared absorption of CVD diamond measured by laser calorimetry (2005)
Wörner, E., Wild, C., Müller-Sebert, W., Grimm, M., Koidl, P.
The infrared absorption of CVD diamond at a wavelength of 10.6 mu m was measured as a function of temperature between 20 and 500 deg C. CVD diamond of different structural quality was investigated....
Schneider, H., Maier, T., Fleißner, J., Walther, M., Koidl, P., Weimann, G., ...
Quantum well infrared photodetectors (QWIPs) have gained maturity for large focal plane arrays (FPA) with excellent thermal resolution, low 1/f noise, low fixed-pattern noise, and high pixel...
Woerner, E., Wild, C., Koidl, P.
WO 200173158 A UPAB: 20011217 NOVELTY - Production of an element made from polycrystalline diamond (4) comprises molding a substrate (2) with a surface complementary to a surface of the element;...
Ultrasensitive femtosecond two-photon detector with resonantly enhanced nonlinear absorbtion (2005)
Schneider, H., Maier, T., Liu, H.C., Walther, M., Koidl, P.
We report on two-photon detection based on nonlinear absorption between subbands in quantum wells. Resonantly enhanced nonlinear absorption, 6 orders of magnitude higher than that of typical bulk...
Two-photon QWIPs for quadratic detection of weak mid-infrared laser pulses (2005)
Maier, T., Schneider, H., Liu, H.C., Walther, M., Koidl, P.
We report on QWIPs optimized for nonlinear detection using a bandstructure design with three energetically equidistant subbands. The double resonant character of the two-photon transition from the...
Dual-band QWIP focal plane array for the second and third atmospheric windows (2005)
Schneider, H., Maier, T., Fleißner, J., Walther, M., Koidl, P., Weimann, G., ...
We report on the development and status of a dual-band QWIP FPA with 384 x 288 pixels and 40 µm pitch for the 3-5 µm (mid-wavelength infrared, MWIR) and 8-12 µm (long-wavelength infrared, LWIR)...
Mid-wavelength, long-wavelength, and dual-band QWIP focal plane arrays (2004)
Schneider, H., Fleißner, J., Maier, T., Walther, M., Koidl, P., Weimann, G., ...
We report on our QWIP FPA developments for the 8 - 12 mu and 3 - 5 mu atmospheric windows. In the 3 - 5 mu regime, we apply several device concepts, giving rise to photoconductive and photovoltaic...
Guettler, H., Koidl, P., Seelmann-Eggebert, M.
WO 200219403 A UPAB: 20020704 NOVELTY - Production of a composite structure comprises preparing a growth substrate (1) having or forming a component layer (2) with an electronic microsystem, the...
High-resolution 3-5 µm/8-12mm dual-band quantum well infrared photodetector array (2004)
Schneider, H., Maier, T., Fleißner, J., Walther, M., Koidl, P., Weimann, G., ...
A dual-band focal plane array (FPA) for the 8-12 mu and 3-5 mu atmospheric windows with simultaneous integration in both spectral bands on each pixel is reported. The FPA is based on quantum well...
Resonant two-photon photoemission in quantum-well infrared photodetectors (2004)
Maier, T., Schneider, H., Walther, M., Koidl, P., Liu, H.C.
We report the nonlinear behavior of quantum-well infrared photodetectors with three energetically equidistant energy levels. The giant resonant nonlinearity leads to a quadratic power dependence of...
Woerner, E., Wild, C., Koidl, P.
DE 10216408 A UPAB: 20031208 NOVELTY - Cutting tool comprises a cutting insert (3) made from diamond connected to a support part, and a chip deflector (6). The cutting insert is an integral component...
High-resolution QWIP focal plane arrays: Towards third-generation thermal imagers (2004)
Schneider, H., Fleißner, J., Maier, T., Walther, M., Koidl, P., Weimann, G., ...
GaAs-based quantum well infrared photodetector (QWIP) focal plane arrays (FPA) have developed into an important class of infrared sensors for thermal imaging. Mature III-V technology enables us to...
Time-resolved electron transport studies on InGaAs/GaAs-QWIPs (2003)
Steinkogler, S., Schneider, H., Rehm, R., Walther, M., Koidl, P., Grant, R., ...
Due to the short internal response time, quantum-well infrared photodetectors (QWIPs) are interesting for high-speed applications such as heterodyne spectroscopy or laser pulse monitoring. We studied...
InAs/(GaIn)Sb short period superlattices for IR detection (2003)
Fuchs, F., Schmitz, J., Pletschen, W., Koidl, P., Weimann, G.
InAs/(GaIn)Sb short-period superlattices (SL) grown by molecular-beam epitaxy (MBE) show a broken-gap type-II band alignment The effective band gap can be tailored ranging from the far-IR to the...
High performance QWIP FPAs for the 8-12 µm and 3-5 µm regimes (2003)
Schneider, H., Fleißner, J., Rehm, R., Kiefer, R., Walther, M., Koidl, P., ...
Quantum well infrared photodetectors (QWIPs) have evolved into a mature, GaAs-based III-V technology that enables us to realize large infrared detector arrays with excellent thermal and spatial...
High-resolution QWIP FPAs for the 8-12 µm and 3-5 µm regimes (2003)
Schneider, H., Fleißner, J., Rehm, R., Walther, M., Pletschen, W., Koidl, P., ...
We report on our QWIP focal plane array (FPA) developments for the 8 - 12 µm and 3 - 5 µm regimes. In the long-wavelength infrared, we have realized several types of QWIP FPAs with array sizes from...
Quantum well infrared photodetectors and thermal imaging cameras (2003)
Schneider, H., Fleißner, J., Rehm, R., Walther, M., Koidl, P., Weimann, G., ...
We report on our QWIP focal plane array (FPA) developments for thermal-imaging applications in the 8 - 12 µm long-wavelength infrared (LWIR) and 3 - 5 µm mid-wavelength infrared (MWIR) regimes....
Steinkogler, S., Schneider, H., Walther, M., Koidl, P.
We have investigated the transport properties of optically excited electrons in a 100 period InGaAs/GaAs-quantum well infrared photodetector. The electrons were excited by femtosecond-infrared laser...
Thermal and optical properties of high purity CVD-diamond discs doped with boron and nitrogen (2003)
Wörner, E., Pleuler, E., Wild, C., Koidl, P.
The effect of nitrogen and boron doping on the thermal and optical properties of high purity CVD-diamond grown by microwave plasma (MW-CVD) and DC arc-jet chemical vapor deposition (DCAJ-CVD) is...
Rehm, R., Schneider, H., Walther, M., Koidl, P., Weimann, G.
We investigate the influence of avalanche multiplication by impact ionization on the photoconductive gain and the noise gain in quantum- well infrared photodetectors (QWIPs). A quantitative method is...
Swept away. QWIPs are fast and can have ideal (~100%) absorption tool (2003)
Liu, H.C., Dudek, R., Oogarah, T., Grant, P.D., Wasilewski, R., Schneider, H., ...
The ultra high-speed capability of quantum-well infrared photodetectors (QWIPs) is well known, thanks to their intrinsic short carrier lifetime (about 5 ps). This obviously makes QWIPs well suited...
Low-noise quantum well infrared photodetectors for high-resolution thermal imaging (2002)
Schneider, H., Walther, M., Fleißner, J., Rehm, R., Diwo, E., Schwarz, K., ...
We report on the layer structure, transport mechanism, and detection properties of low-noise QWIPs. These devices show high detectivity, low signal and noise currents, and distinctive noise...
Umezawa, H., Arima, T., Fujihara, N., Taniuchi, H., Ishizaka, H., Tachiki, M., ...
The RF device potential of surface-channel polycrystalline diamond metal-insulator-semiconductor field-effect transistors (MISFETs) is demonstrated for the first time. Utilizing a self-aligned gate...
Rehm, R., Schneider, H., Walther, M., Koidl, P.
We show that the dark current noise spectrum of an In(0.30)Ga(0.70)As/GaAs quantum-well infrared photodetector (QWIP) is characterized by two plateau-like frequency regions. At high frequencies, the...
Steinkogler, S., Schneider, H., Rehm, R., Walther, M., Koidl, P.
We report on the time-resolved photocurrent response on an InGaAs/GaAs quantum-well infrared photodetector stimulated by infrared fs-laser pulses (~9 µm wavelength). We observe two dynamic...
Herres, N., Kirste, L., Obloh, H., Köhler, K., Wagner, J., Koidl, P.
An extension of Bond's method for determining precision lattice parameters serves to determine the lattice parameters of (strained) unit cells of a film from the peak positions of the film alone. We...
The CAP-reactor, a novel microwave CVD system for diamond deposition (2002)
Pleuler, E., Wild, C., Füner, M., Koidl, P.
The development and improvement of efficient microwave plasma reactors for diamond CVD is still an important topic and a prerequisite for the reliable production of high quality diamond films and...
Verfahren zur Diamant-Beschichtung von Oberflaechen (2002)
Koidl, P., Wild, C., Mangang, P.
DE 19844538 A UPAB: 20000524 NOVELTY - A diamond CVD process comprises surface pretreatment in a hf discharge in a hydrogen and hydrocarbon atmosphere. DETAILED DESCRIPTION - Preferred Features: The...
NOVELTY - The plasma reactor has a reactor housing (2) acting as a microwave resonator coupled to a HF generator (6) via a HF coaxial line (5) and containing a holder (3) for the treated substrate,...
Micro thermal management of high-power diode laser bars (2001)
Lorenzen, D., Bonhaus, J., Fahrner, E., Kaulfersch, E., Wörner, E., Koidl, P., ...
Lifetime and reliability of high-power diode laser bars are sensitively related to operating temperature, mounting stress, and solder electromigration. These three factors have been taken into...
CVD-diamond optical lenses (2001)
Woerner, E., Wild, C., Mueller-Sebert, W., Koidl, P.
Diamond lenses are highly desirable for a variety of optical applications including the operation under high-power, high thermal load and under harsh environmental conditions. We report on the...
Ten years of QWIP development at Fraunhofer IAF (2001)
Schneider, H., Koidl, P., Walther, M., Fleissner, J., Rehm, R., Diwo, E., ...
We report on our quantum well infrared photodetector (QWIP) developments aimed at high-performance thermal imaging with tow-dimensional focal plane arrays (FPA). Due to the limited charge storage...
Responsivity and Gain of InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPS: a Comparative Study (2001)
Rehm, R., Schneider, H., Schwarz, K., Walther, M., Koidl, P., Weimann, G.
We experimentally compare the peak responsivity R, gain g, quantum efficiency, and detectivity of GaAs/AlGaAs-QWIPs with devices based on the competing material system InGaAs/GaAs. For this purpose...
Koidl, P., Wild, C., Wörner, E.
The diamond body (12) contains at least one longitudinal recess (13,15), extending at an angle to mechanical stresses induced by coupling to each heat source (30). Pref. a number of recesses extend...
Low-noise QWIPs for FPA sensors with high thermal resolution (2000)
Schneider, H., Walther, M., Fleissner, J., Rehm, R., Diwo, E., Schwarz, K., ...
We report on novel low-noise QWIP focal plane arrays (FPAs) which allow us to improve the thermal resolution of infrared sensors in the long-wavelength infrared (LWIR) atmospheric window. Our concept...
QWIP FPAs for high-performance thermal imaging (2000)
Schneider, H., Walther, M., Schönbein, C., Rehm, R., Fleißner, J., Pletschen, W., ...
System properties of focal plane array (FPA) cameras based on GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) operating in the long-wavelength infrared are analyzed. Due to the limited...
Surface order evaluation of the heteroepitaxial diamond film grown on an inclined ß-SIC(001) (2000)
Kono, S., Goto, T., Abukawa, T., Wild, C., Koidl, P., Kawarada, H.
The surface order of a heteroepitaxial diamond (001) film grown on an inclined beta-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of...
Walther, M., Fleißner, J., Schneider, H., Schönbein, C., Pletschen, W., Diwo, E., ...
Photoconductive GaAs/AlGaAs quantum well infrared photodetectors are investigated for the fabrication of IR cameras for thermal imaging in the third atmospheric window. The long wavelength infrared...
High-speed photocurrent in quantum well infrared photodetectors (1999)
Schneider, H., Koidl, P., Walther, M., Lao, Z., Schlechtweg, M.
Quantum well infrared photodetectors (QWIPs) are very promising for ultrafast photodetection in the 8- 12 mu m infrared regime. We report on time-resolved studies of the intersubband photocurrent in...
Optical and thermo-optical properties of chemical vapor deposited (CVD) diamond (1999)
Wörner, E., Wild, C., Müller-Sebert, W., Locher, R., Koidl, P.
Natural diamond is a material with excellent optical and thermo-optical properties, but limited to small sizes. However, the advent of CVD techniques made large area diamond available. For the...
Verfahren zur Herstellung metallisierter Diamant-Waermespreizer (1999)
Wild, C., Koidl, P., Brink, D., Mueller-Sebert, W., Jehle, M.
A scored channel (2) is made by laser cutting into the surface of a diamond disc (1) to a preset depth without cutting the diamond disc in half. After cutting into it, the whole diamond disc's top...
Simulation and development of optimized microwave plasma reactors for diamond deposition (1999)
Füner, M., Wild, C., Koidl, P.
A computer program has been developed for the design and optimization of microwave plasma reactors used for the chemical vapour deposition (CVD) of diamond. The computer code consists of program...
Wild, C., Fuener, M., Koidl, P.
In a plasma reactor for producing and maintaining a plasma, a cavity resonator (11) is provided, having a cross-section which is tapered in the vertex areas (13, 16). The wall (14) of the cavity...
Dielectric properties of CVD diamond for radiofrequency window applications (1999)
Spörl, R., Heidinger, R., Wild, C., Schwab, R., Koidl, P.
Free-standing discs of CVD diamond were produced with a new technique by which windows with a diameter up to 6 inches can be formed. Specimen sets grown with this technique were studied for their...
Steeds, J.W., Gilmore, A., Bussmann, K.M., Butler, J.E., Koidl, P.
Transmission electron microscopy samples have been prepared from high quality, thick (> 100 mu m) CVD diamond films in order to undertake a detailed study of the regions adjacent to the columnar...
Schneider, H., Schönbein, C., Koidl, P., Weimann, G.
Standing light waves caused by the interference of incident and reflected beams lead to a spatial modulation of the electromagnetic field within the active region of a quantum well infrared...
GaAs/AlGaAs-Quantenfilm-Photodetektoren für Kameras im 8...12 Mikrometer Bereich (1999)
Schneider, H., Koidl, P., Walther, M., Fleissner, J., Ziegler, J.
Intersubband transitions in GaAs/AlGaAs heterostructures are increasingly used in cameras for the thermal infrared regime. An excellent thermal resolution has been achieved in particular in the 8 ......
Dielectric properties of CVD diamond for radiofrequency window applications. (1999)
Spörl, R., Heidinger, R., Wild, C., Schwab, R., Koidl, P.
Vincenzini, P. [Hrsg.]
Polycrystalline Diamond Films for Optical Applications. (1998)
Wild, C., Mueller-Sebert, W., Eckermann, T., Koidl, P.
The potential use of CVD thin diamond films in optics is investigated. Surface roughness is seen as the most critical parameter affecting optical quality. Preparation of diamond films, analysis of...
Optical and electrical properties of InAs/Ga(1-x)In(x)Sb photodiodes for infrared detection (1998)
Fuchs, F., Pletschen, W., Weimar, U., Schmitz, J., Walther, M., Wagner, J., ...
We report on the fabrication and characterization of infrared photodiodes based on InAs/(GaIn)Sb superlattices grown on GaSb substrates. A series of devices employing a strain-optimized InAs/(GaIn)Sb...
Novel microwave plasma reactor for diamond synthesis (1998)
Füner, M., Wild, C., Koidl, P.
Numerical simulations were performed to predict the performance of microwave plasma reactors with various reactor geometries. The simulations include the calculation of the electric field...
Microwave properties of coplanar transmission lines and filters on diamond from 1-120 GHz (1998)
Steinhagen, F., Haydl, W.H., Krems, T., Marsetz, W., Locher, R., Wild, C., ...
The properties of coplanar transmission lines (CPWs) and -filters on polycrystalline diamond substrates are investigated over the frequency range from 1-120 GHz. Experimental results obtained for...
Large area microwave-plasma CVD of diamond wafers for optical and thermal applications (1998)
Koidl, P., Wild, C., Füner, M., Wörner, E., Müller-Sebert, W.
Based on numerical simulations, a novel microwave-plasma CVD reactor with an elliptical cavity has been designed that exhibits excellent performance and stability. After the successful test of a...
III-V semiconductor quantum well and superlattice detectors (1998)
Walther, M., Fuchs, F., Schneider, H., Fleissner, J., Schmitz, J., Pletschen, W., ...
The paper reviews the development of IR detectors for the 8-12 mu m wavelength range based on GaAs/AlGaAs quantum well structures and InAs/(GaIn)Sb short-period superlattices (SPSLs) at the...
Wörner, E., Wild, C., Müller-Sebert, W., Füner, M., Jehle, M., Koidl, P.
To investigate the in plane thermal diffusivity of chemical vapor deposited diamond layers, two new techniques were developed based on electrically induced converging and linear thermal waves. With...
Diamond windows for infrared and multispectral applications (1998)
Koidl, P., Wild, C., Wörner, E., Müller-Sebert, W., Füner, M., Locher, R.
The low pressure deposition of polycrystalline diamond and the preparation of diamond windows at the Fraunhofer-IAF is reported. Using microwave plasma CVD, large area (2-6'' diameter) diamond wafers...
Carrier trapping and release in CVD-diamond films (1998)
Nebel, C.E., Stutzmann, M., Lacher, F., Koidl, P., Zachai, R.
Transient photocurrent experiments were performed to investigate transport and trapping kinetics in highly oriented (HOD) and polycrystalline (PD) chemical vapour deposition-diamond films...
Ultrafast intersubband photocurrent response in quantum-well infrared photodetectors (1997)
Ehret, S., Schneider, H., Fleissner, J., Koidl, P., Böhm, G.
We report on a high bandwidth measurement of the transient intersubband photocurrent of a GaAs/AlGaAs multiple quantum-well infrared photodetector (QWIP). The photocurrent is excited via tunable...
Wagner, J., Schmitz, J., Herres, N., Tränkle, G., Koidl, P.
InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy were studied by spectroscopic ellipsometry. The pseudodielectric function of InAs/GaSb SLs could be fitted using modified...
Photovoltaic quantum well infrared photodetectors: The four-zone scheme (1997)
Schneider, H., Schönbein, C., Walther, M., Schwarz, K., Fleissner, J., Koidl, P.
We have investigated a particular class of photovoltaic quantum well intersubband photodetectors. Each period of the active region in these structures consists of four zones, namely an excitation...
InAs/(GaIn)Sb superlattices for infrared detection (1997)
Wagner, J., Fuchs, F., Schmitz, J., Pletschen, W., Weimar, U., Herres, N., ...
We report on the growth and characterization of InAs/(GaIn)Sb superlattices (SLs) as well as on the fabrication and testing of SL infrared (IR) photodiodes. InAs/Ga(0.8)In(0.2)Sb SLs with individual...
InAs/AlSb/GaSb heterostructures (1997)
Wagner, J., Schmitz, J., Fuchs, F., Obloh, H., Herres, N., Koidl, P.
InAs/AlSb/GaSb heterostructures are of interest for both fundamental studies and device applications because of the band overlap between InAs and GaSb and the large conduction band offset between...
Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide (1997)
Kawarada, H., Wild, C., Herres, N., Locher, R., Koidl, P., Nagasawa, H.
We have deposited epitaxial diamond films with very low angular spread on epitaxial beta-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths...
Behr, D., Locher, R., Wagner, J., Koidl, P., Richter, V., Kalish, R.
Homoepitaxial chemical vapor deposited (CVD) 13C diamond films were grown on (100) diamond substrates predamaged by implantation with 620 keV Xe ions. The structural quality of the overgrown films...
Electron field emission from thin fine-grained CVD diamond films (1997)
Lacher, F., Wild, C., Behr, D., Koidl, P.
The field emission properties of thin, fine-grained diamond films were investigated by measuring emission currents versus electric field curves. The measurements were performed with a spherical...
Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics (1996)
Wagner, J., Schmitz, J., Fuchs, F., Weimar, U., Herres, N., Tränkle, G., ...
We report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by...
Nitrogen induced increase of growth rate in chemical vapor deposition of diamond (1996)
Müller-Sebert, W., Wörner, E., Fuchs, F., Wild, C., Koidl, P.
Polycrystalline diamond films have been grown by microwave assisted chemical vapor deposition from methane/hydrogen gas mixtures. The addition of small amounts of nitrogen with concentrations below...
Intersubband Raman scattering in InAs/AlSb quantum wells (1996)
Wagner, J., Schmitz, J., Richards, D., Ralston, J.D., Koidl, P.
Raman spectroscopy has been used to study intersubband transitions in InAs/AlSb single quantum wells grown by molecular-beam epitaxy on (100) GaAs substrates using strain-relaxed AlSb or GaSb buffer...
Wörner, E., Wagner, J., Müller-Sebert, W., Wild, C., Koidl, P.
The infrared Raman spectrum of chemical vapor deposited (CVD) diamond films has been correlated with the in-plane thermal conductivity of the films. The scattering strength of the 1332 cm(exp -1)...
Homoepitaxial growth of CVD diamond: effect of nitrogen contaminations on growth rates (1996)
Wild, C., Locher, R., Koidl, P.
Homoepitaxial diamond films were deposited on {100} and {111} oriented substrates using microwave plasma assisted CVD. The growth rate was measured in situ using laser interferometry. Various amounts...
Herres, N., Fuchs, F., Schmitz, J., Pavlov, K.M., Wagner, J., Ralston, J.D., ...
We have studied InAs/GaSb superlattices (SLs) grown with either InSb-like or GaAs-like interfaces (IFs) on top of a GaSb buffer layer on (100) GaAs substrates. The InAs layer thickness was varied...
Characterisation and lattice location of nitrogen and boron in homoepitaxial CVD diamond (1996)
Samlenski, R., Haug, C., Brenn, R., Wild, C., Locher, R., Koidl, P.
Homoepitaxial diamond films were prepared by microwave plasma assisted chemical vapor deposition (CVD) on {100} and {111} substrates from gas mixtures of 0.5 and 1.5 vol. per cent CH4 diluted in H2....
Wagner, J., Schmitz, J., Herres, N., Ralston, J.D., Koidl, P.
We have studied backfolded longitudinal acoustic (LA) phonons in InAs/GaSb superlattices (SLs) intentionally grown with either InSb-like or GaAs-like interfaces (IFs). Raman scattering by folded LA...
Schmitz, J., Wagner, J., Fuchs, F., Herres, N., Koidl, P., Ralston, J.D.
Several issues related to the interface structure in molecular-beam epitaxially grown InAs/AlSb and InAs/GaSb heterostructures are investigated by Raman scattering, photoluminescence and X-ray...
Optical and electrical characterization of boron-doped diamond films (1995)
Locher, R., Wagner, J., Fuchs, F., Maier, M., Gonon, P., Koidl, P.
Diamond films synthesized from CHdeep4/Hdeep2 mixtures using microwave-assisted plasma deposition were prepared on Si substrates under different growth conditions resulting in (100) and (110)/(111)...
Numerical simulations of microwave plasma reactors for diamond CVD (1995)
Füner, M., Wild, C., Koidl, P.
A model has been developed simulating electromagnetic fields and plasma densities of reactors for microwave plasma assisted chemical vapour deposition. Computer programs calculate alternately the...
Intrinsic radiative lifetimes of donor-acceptor pair excitations in diamond (1995)
Schneider, H., Dischler, B., Wild, C., Koidl, P.
The intrinsic decay dynamics of pair excitations involving a deep donor and a shallow acceptor in chemical-vapor-deposited diamond is studied by time-resolved photoluminescence. Appropriate...
Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering (1995)
Wagner, J., Schmitz, J., Fuchs, F., Ralston, J.D., Koidl, P., Richards, D.
We have used resonant Raman scattering to study intersubband transitions InAs/AlSb quantum wells. For optical excition in resonance with E1 band gap of InAs, both high- and low-frequency coupled...
Incorporation of nitrogen in chemical vapor deposition diamond. (1995)
Samlenski, R., Haug, C., Brenn, R., Wild, C., Locher, R., Koidl, P.
To study the incorporation of nitrogen, diamond films were prepared by chemical vapor deposition homoepitaxially on (100) and (111) oriented diamond substrates. 50 ppm of isotopic 15N2 was added to...
Behr, D., Wagner, J., Ralston, J.D., Koidl, P., Ramsteiner, M., Schrottke, L., ...
In As/GaSb short-period superlattices (SLs) with either InSs- or GaAs-like interfaces were studied by Raman scattering and spectral ellipsometry. Roomtemperature ellipsometrie measurements show...
Wagner, J., Fuchs, F., Herres, N., Schmitz, J., Koidl, P.
InAs/Ga(l-x)In(x)Sb superlattices (SLs) are of current interest because of their potential application in infrared optoelectronic devices. We present a detailed study of the structural and optical...
Hydrogen-related IR absorption in chemical vapour deposited diamond (1995)
Fuchs, F., Wild, C., Schwarz, K., Koidl, P.
Polycrystalline and homoepitaxial diamond films deposited from high12C and high13C-containing gases have been characterized by Fourier transform IR spectroscopy. We present evidence that some...
Fuchs, F., Wild, C., Schwarz, K., Müller-Sebert, W., Koidl, P.
Homoepitaxial diamond films grown by chemical vapor deposotion from high12C and high13C containing gases have been studied by Fourier transform infrared spectroscopy. A sharp absorption band observed...
Deformatio-induced ferroelectric domain pinning in chromium doped LeNbO3 (1995)
Bender, G., Meisen, S., Herres, N., Wild, C., Koidl, P.
We report on the correlation between the dopant-distribution and the location of ferroelectric domains in Czochralski grown, chromium-doped LiNbO3 single crystals. Optical microscopy, scanning...
Wagner, J., Schmitz, J., Obloh, H., Koidl, P.
InAs/AlSb/GaSb/AlSb/InAs interband-tunneling structures have been analyzed with respect to the composition and structural quality of the AlSb tunneling barriers. The addition of AlAs monolayers at...
Characterization of homoepitaxial diamond films by nuclear methods (1995)
Samlenski, R., Schmälzlin, J., Brenn, R., Wild, C., Müller-Sebert, W., Koidl, P.
Isotopically marked high13C diamond films were deposited by microwave-plasma-assisted chemical vapour deposition homoepitaxially on (100) and (111) natural diamond substrates. The deposition was...
Locher, R., Wagner, J., Fuchs, F., Wild, C., Hiesinger, P., Gonon, P., ...
Polycrystalline diamond films were prepared by Microwave plasma assisted chemical vapour deposition from CH4-H2 mixtures. For p-type doping with boron, trimethylborate was added at concentrations...
Verfahren zur Abscheidung glatter polykristalliner Schichten (1994)
Wild, C., Koidl, P., Mueller Sebert, W., Walcher, H., Eckermann, T.
A process for the deposition of smooth polycrystalline layers, in particular diamond layers, is composed of two process steps. In a first step, the crystal direction of an octahedron (8, 38) is...
Schmitz, J., Wagner, J., Maier, M., Obloh, H., Koidl, P., Ralston, J.D.
We investigate unintentional arsenic incorporation during the molecular-beam epitaxial growth of AlSb/InAs/GaSb heterostructures, using both a standard As sub4 evaporation cell and a valved arsenic...
Studies of GaSb-capped InAs/AlSb quantum wells by resonant Raman scattering. (1994)
Wagner, J., Schmitz, J., Maier, M., Ralston, J.D., Koidl, P.
We have used resonant Raman scattering to study GaSb-capped AlSb/InAs/AlSb quantum wells grown by molecular-beam epitaxy. The shutter sequence for the growth of the InAs/AlSb heterointerfaces was...
Structure and morphology of oriented diamond films. (1994)
Koidl, P., Wild, C., Herres, N.
Fibre textured as well as heteroepitaxially textured diamond films have been grown by microwave plasma assisted CVD on silicon substrates. The texture axis is determined by the growth parameter alpha...
Strain relaxation in In0.2Ga0.8As/GaAs MQW structures (1994)
Bender, G., Larkins, E.C., Schneider, H., Ralston, J.D., Koidl, P.
We study the limits of pseudomorphic strain in MBE grown In0.2Ga0.8As/GaAs multiple quantum well structures and the influence of lattice relaxation on the optoelectronic properties of high-speed...
Spatially indirect photoluminescence from InAs/AlSb hetero-structures (1994)
Fuchs, F., Schmitz, J., Ralston, J.D., Koidl, P., Heitz, R., Hoffmann, A.
We present a Fourier transform photoluminescence study of InAs/AlSb type H heterostructures, spanning the mid infrared 1 mym - 12 mym wavelength range. The investigated samples consist of single-,...
Spatially direct and indirect photoluminescence from InAs/AlSb heterostructures (1994)
Fuchs, F., Schmitz, J., Ralston, J.D., Koidl, P.
We present a Fourier-transform photoluminescence study of InAs/AlSb type-II heterostructures, spanning the midinfrared 1-12 mym wavelength range. The investigated samples consist of single and double...
Behr, D., Wagner, J., Schmitz, J., Herres, N., Ralston, J.D., Koidl, P., ...
We have used Raman spectroscopy and spectral ellipsometry to investigate InAs/GaSb short-period superlattices (SLs), grown by molecular-beam epitaxy, with either InSb- or GaAs-like interfaces....
Resonance effects in Raman scattering from InAs/AlSb quantum wells. (1994)
Wagner, J., Schmitz, J., Ralston, J.D., Koidl, P.
Resonant Raman scattering has been used to study GaSb-capped AlSb/InAs/AlSb quantum wells, grown by molecular-beam epitaxy with a shutter sequence intended to promote the formation of an InSb-like...
Resolved donor-acceptor pair-recombination lines in diamond luminescence (1994)
Dischler, B., Rothemund, W., Wild, C., Locher, R., Biebl, H., Koidl, P.
Cathodoluminescence has been investigated in diamond films, prepared by microwave plasma assisted chemical-vapor deposition. Results are presented for various diamond films differing in crystalline...
Photovoltaic quantum well intersubband infrared detectors by internal electric fields (1994)
Schneider, H., Ehret, S., Larkins, E.C., Ralston, J.D., Schwarz, K., Koidl, P.
Photoluminescence of InAs/AlSb single quantum wells. (1994)
Fuchs, F., Schmitz, J., Obloh, H., Ralston, J.D., Koidl, P.
A photoluminescence study of InAs/AlSb single quantum well structures with a width varying between 20 and 5 nm is presented. Using Fourier-transform spectroscopy, the spatiallv indirect radiative...
Oriented CVD diamond films - twin formation, structure and morphology. (1994)
Wild, C., Kohl, R., Herres, N., Müller-Sebert, W., Koidl, P.
We studied three types of oriented diamond film: (I) strongly fibre textured films, (II) epitaxially textured films grown on (100) Si, and (III) homoepitaxial films. The samples were prepared using...
Nitrogen stabilized 100 texture in chemical vapor deposited diamond films (1994)
Locher, R., Wild, C., Herres, N., Behr, D., Koidl, P.
We have studied the influence of nitrogen impurities in CH4/H2 gas mixtures on the structure and morphology of polycrystalline diamond films prepared by microwave plasma assisted chemical vapor...
Wagner, J., Schmitz, J., Behr, D., Ralston, J.D., Koidl, P.
We have used resonant Raman scattering from both longitudinal-optical phonons and interface modes to study the chemical bonding across the InAs/AlSb interface in InAs/AlSb quantum wells grown by...
Wagner, J., Schmitz, J., Ralston, J.D., Koidl, P.
We have used resonant Raman scattering by longitudinal optical (LO) phonons to analyze GaSb/GaAs and InSb/GaAs interfaces for GaSb and InSb grown on (100) GaAs by molecular-beam epitaxy. Striking...
Interface characterization of InAs/AlSb heterostructures by far infrared optical spectroscopy (1994)
Fuchs, F., Schmitz, J., Schwarz, K., Wagner, J., Ralston, J.D., Koidl, P.
We present high resolution measurements of the far infrared reflectance and absorbance of InAs/AlSb type II heterostructures, grown on GaAs substrates by molecular beam epitaxy. Quantum wells grown...
Influence of MBE growth process on photovoltaic 3-5 mym intersubband photodetectors. (1994)
Larkins, E.C., Schneider, H., Ehret, S., Fleissner, J., Dischler, B., Koidl, P., ...
The asymmetric photoresponse and dark current of GaAs/AlAs/Al0.3Ga0.7As 3-5 mym intersubband photodetectors is examined both experimentally and through simulations. The intended doping position is...
Schmitz, J., Wagner, J., Maier, M., Obloh, H., Hiesinger, P., Koidl, P., ...
We examine in detail the improvement in the structural and transport properties of MBE-grown InAs/AlSb quantum wells by utilising a valved cracker cell to inhibit unintentional As incorporation in...
Fuchs, F., Schmitz, J., Ralston, J.D., Koidl, P.
An optical study of n-type bulk InAs and epitaxially grown InAs-AlSb single quantum wells is presented. Fourier transform PLE spectra from a series of bulk samples with varying dopant concentration...
Diamond luminescence - resolved donor-acceptor pair recombination lines. (1994)
Dischler, B., Rothemund, W., Maier, K., Wild, C., Biebl, H., Koidl, P.
Cathodoluminescence and photoluminescence were analysed in diamond films prepared by microwave plasma assisted chemical vapour desposition. Results are presented for various diamond films differing...
Schmitz, J., Ralston, J.D., Koidl, P., Wagner, J.
Electric-field-induced Raman scattering by longitudinal optical (LO) phonons has been used to study the surface Fermi level position in InSb layers grown by molecular beam epitaxy on (100) GaAs. From...
Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE. (1993)
Larkins, E.C., Bender, G., Schneider, H., Ralston, J.D., Rothemund, W., Dischler, B., ...
We have fabricated p-i-n photodetectors with 10, 15 and 20 well Insub0.2Gasub0.8As/GaAs multiple quantum wells (MQWs) in the intrinsic region, whose bandwidths exceed 23 GHz. Cathodoluminescence (CL)...
Bender, G., Larkins, E.C., Schneider, H., Ralston, J.D., Koidl, P.
We have used high-resolution x-ray diffraction and photocurrent spectroscopy to investigate strain relaxation in Insub0.2Gasub0.8As/GaAs multiple quantum wells and its influence on the optoelectronic...
Space-charge effects in photovoltaic double barrier quantum well infrared detectors. (1993)
Schneider, H., Larkins, E.C., Ralston, J.D., Schwarz, K., Fuchs, F., Koidl, P.
We show that the spatial distribution of the dopants strongly influences the transport asymmetry and the photovoltage observed in double barrier quantum well intersubband photodetectors. This...
Smooth diamond films for optical applications (1993)
Koidl, P., Wild, C., Locher, R., Kohl, R.
Optically smooth and homogeneous diamond films of mym thickness have been deposited by the combination of high nucleation density growth techniques and dynamic CVD. To overcome the scattering problem...
Wagner, J., Schmitz, J., Behr, D., Ralston, J.D., Koidl, P.
Raman scattering from both longitudinal optical phonons and interface modes has been used to study the chemical bonding across the InAs/AlSb interface in GaSb capped InAs/AlSb quantum wells grown by...
Locher, R., Wild, C., Müller-Sebert, W., Kohl, R., Koidl, P.
We report on the growth and characterization of polycrystalline diamond films exhibiting fibre textures with the fibre axis parallel (100) or slightly off (100). The films surface is formed...
Ion channeling in textured polycrystalline diamond films. (1993)
Samlenski, R., Flemig, G., Brenn, R., Wild, C., Müller-Sebert, W., Koidl, P.
Channeling of Hhighplus and H highplus/sub2 ions of energies between 1.0 and 2.0 MeV in (100)-textured polycristalline diamond films grown by microwave plasma-assisted chemical-vapor deposition has...
Hydrogen in polycrystalline diamond. An infrared analysis. (1993)
Dischler, B., Wild, C., Müller-Sebert, W., Koidl, P.
Hydrogen in polycrystalline diamond (PCD) films has been analysed by infrared spectroscopy. A series of differently prepared PCD films exhibiting considerable differences in the shape of the C-H...
Homoepitaxial 13C diamond films studied by micro-Raman and photoluminescence spectroscopy (1993)
Behr, D., Wagner, J., Wild, C., Koidl, P.
Raman microscopy has been used to study high13 C and high12 C/high13 C isotopically mixed homoepitaxial diamond films grown by chemical vapor deposition on natural diamond substrates. The measured...
Fuchs, F., Kheng, K., Schwarz, K., Koidl, P.
We report for the first time on Fourier transform photoluminescence excitation spectroscopy in the mid-infrared covering the wavelength range between 1 and 5.5 Mym. By studying a medium-bandgap...
Fermi-edge singularity in degenerate n-type bulk InAs (1993)
Fuchs, F., Kheng, K., Koidl, P., Schwarz, K.
n-type doped InAs bulk crystals has been studied by Fourier-transform photoluminescence in combination with Fourier-transform photoluminescence excitation (FTPLE) spectroscopy. The FTPLE spectra...
Larkins, E.C., Herres, N., Ralston, J.D., Koidl, P., Wagner, J.
Resonant Raman scattering by longitudinal optical (LO) phonons in the GaAs barriers of InxGa1-xAs/GaAs multiple quantum well structures has been used to study the onset of strain relaxation as te...
Cross relaxation and radiative recombination of Co2plus ions in ZnS. (1993)
We report on high resolution Fourier transform spectroscopy of the absorbance, photoluminescence and photoluminescence excitation of the 4T2 - 4A2 transition of Co2+ in structurally perfect ZnS...
Chemical vapour deposition and characterization of smooth -100-faceted diamond films. (1993)
Wild, C., Koidl, P., Müller-Sebert, W., Walcher, H., Kohl, R., Herres, N., ...
Smoot (100)-faceted diamond films have been prepared by microwave-assisted chemical vapour deposition from CH4-H2 mixtures. Growth has been controlled by in-situ laser interferometry. Under...
Schmitz, J., Koidl, P., Ralston, J.D., Wagner, J.
Resonant Raman scattering by longitudinal optical (LO) phonons and by interface modes was used to study InSb/GaAs and InAs/AlSb heterointerfaces for InSb on GaAs and for InAs/AlSb quantum wells...
Koidl, P., Uzan-Saguy, C., Kalish, R., Bruder, M., Bachem, K.H., Wagner, J.
Resonant Raman scattering by longitudinal optical phonons has been used to study the effect of annealing in a hot Hg bath on high113Inhigh+ and high11Bhigh+ implanted Cdsub0.23Hgsub0.77Te. Up to the...
Kheng, K., Schneider, H., Fuchs, F., Koidl, P., Ralston, J.D., Ramsteiner, M.
We report on a novel GaAs:Si/(AlGa)As multiquantum well photodetector structure which exhibits photoresponse maxima in both the 8 - 12 and 3 - 5 Mym spectral regions. The relative intensity of these...
Schneider, H., Kheng, K., Ramsteiner, M., Ralston, J.D., Fuchs, F., Koidl, P.
We have studied the wavelength and electric-field characteristics of intersubband photodetectors where a thin AlAs tunnel barrier was introduced between one side of the GaAs quantum well and thicker...
Polycrystalline diamond for optical thin films (1992)
Müller-Sebert, W., Wild, C., Koidl, P., Herres, N., Eckermann, T., Wagner, J.
Polycrystalline diamond (PCD) films have been grown on silicon substrates by thermally activated (hot filament) chemical vapour deposition (CVD) and microwave plasma-assisted CVD. In addition,...
Dischler, B., Fuchs, F., Kheng, K., Koidl, P., Ralston, J.D., Schneider, H.
We have found experimental evidence that the tunneling processes which are crucial to the detection properties of these devices are not only controlled by the thickness of the AlAs tunnel barriers...
Optical applications of polycristalline diamond (1992)
Current and potential applications of polycrystalline diamond as a transmissive material for electromagnetic radiation are reviewed. Applications including protective or antireflection coatings on...
Schneider, H., Kheng, K., Fuchs, F., Bittner, P., Dischler, B., Gallagher, D.F.G., ...
Two novel molecular-beam epitaxially grown quantum well device structures for 3-5 and 8-12 Mym photodetection and integrated optics are presented, both of which rely intimately upon the ability of...
Müller-Sebert, W., Koidl, P., Wagner, J., Wild, C.
Raman spectroscopy has been used to study the width of the 1332 cmhighminus1 phonon line and the relative intensity of scattering from nondiamond carbon in (110) and (100) textured diamond films...
Infrared photoluminescence investigations on narrow-band-gap Hg1-XCdXTe (1992)
Fuchs, F., Schwarz, K., Koidl, P.
We report on Fourier transform photoluminescence studies, carried out on bulk crystals of Hgsub1minusxCdsubxTe with narrow band-gap. Two different experimental techniques are discussed to detect weak...
Bittner, P., Fleissner, J., Dischler, B., Gallagher, D.F.G., Koidl, P., Ralston, J.D.
Grating coupling and intersubband absorption of accordingly 10-Mym COsub2 laser radiation are demonstrated in GaAs/AlsubxGasub1minusxAs mid- infrared single-mode waveguides grown by molecular beam...
Diffusive electrical conduction in high-speed p-i-n photodetectors. (1992)
Schneider, H., Larkins, E.C., Fleissner, J., Bender, G., Koidl, P., Ralston, J.D.
We report on time-resolved photocurrent measurements in InGaAs/GaAs-quantum well p-i-n photodetector structures in which the photocurrent is optically excited and electrically detected at different...
Verfahren zur Oberflaechenbehandlung eines Quarzglassubstrates und dessen Anwendung (1991)
Brandt, G., Koidl, P., Moritz, R.
Bei einem Verfahren zur Oberflaechenbehandlung eines Quarzglassubstrates wird eine mechanisch, thermisch und chemisch resistente transparente Mullitschicht erzeugt, indem zunaechst metallisches...
Textured growth and twinning in polycrystalline CVD diamond films (1991)
Müller-Sebert, W., Eckermann, T., Herres, N., Koidl, P., Wild, C.
The morphology and structure of polycrystalline diamond films have been investigated for various growth conditions as a function of film thickness. Samples exhibiting pronounced (100), (110) and...
Resonance effects in Raman scattering from polycrystalline diamond films. (1991)
Koidl, P., Wagner, J., Wild, C.
We report on a Raman spectroscopic study of polycrystalline diamond films using a wide range of incident photon energies (1.16-4.82 eV). The scattering intensity of amorphous sp2-bonded carbon is...
Newman, R.C., Koidl, P., Wagner, J.
Resonant Raman scattering work is reported on local vibrational modes (LVM) of Si and Be in highly doped 3-V semiconductors, such as GaAs, InAs, and InSb. Raman scattering by the LVM of Si donors on...
The reaction of atomic hydrogen with a-C-H and diamond films. (1991)
Vietzke, E., Philipps, V., Flaskamp, K., Koidl, P., Wild, C.
The surface reaction of thermal atomic hydrogen with polycrystalline diamond films, prepared by hot-filament assisted chemical vapour deposition has been investigated. Atomic beam techniques in...
Raman depth profiling in situ sputtering. (1991)
Koidl, P., Ramsteiner, M., Wagner, J.
Raman scattering has been combined with in situ sputtering for a depth resolved Raman spectroscopic characterization of semiconductor structures. Using optical excitation in resonance with higher...
Polycrystalline diamond films for optical applications (1991)
Müller-Sebert, W., Eckermann, T., Koidl, P., Wild, C.
The applicability of CVD diamond films in optics is investigated. Emphasis is put on the role of the surface roughness as the most critical parameter influencing the optical quality of...
Dischler, B., Fuchs, F., Koidl, P., Ralston, J.D., Schneider, H., Schwarz, K.
We report on a new type of GaAs quantum well intersubband photodetector operating at wavelengths of 3-5 Mym. In these structures, the intersubband spacing is considerably enlarged by using ultrathin...
Dischler, B., Hiesinger, P., Koidl, P., Maier, M., Ralston, J.D., Ramsteiner, M.
Utilizing infrared absorption and Hall measurements, a detailed study is presented of the temperature dependence (10 K smaller than T smaller than 300 K) of the intersubband transition and related...
Ion and electron dynamics in the sheath of radio-frequency glow discharges. (1991)
The distribution of ion energies and the temporal modulation of ion and electron currents were measured at the cathode of an asymmetric, capacitively coupled rf discharge system operated at 13.56...
As, D.J., Brandt, G., Dischler, B., Koidl, P., Maier, M., Ralston, J.D., ...
Continuous tuning over the entire 8-12 mym wavelength range is demonstrated for the intersubband absorption resonance in n-doped GaAs/AlxGa1-xAs multiple quantum-well structures following partial...
Intersubband absorption and infrared photodetection at 3.5 and 4.2 mym in GaAs quantum wells (1991)
Dischler, B., Fuchs, F., Koidl, P., Ralston, J.D., Schneider, H.
Far-infrared emission by resonant-polaron effects in narrow-band-gap Hg(1-x)Cd(x)Te (1991)
Fuchs, F., Schneider, H., Schwarz, K., Walcher, H., Triboulet, R., Koidl, P.
We report on the first experimental observation of far-infrared emission within the reststrahlen band of a semiconductor. We have performed Fourier-transform emission experiments on narrow-band-gap...
Direct ion-beam deposition of amorphous hydrogenated carbon films. (1991)
Locher, R., Koidl, P., Wild, C.
Amorphous, hydrogenated carbon (a-C:H) films were prepared by direct ion-beam deposition using a broad-beam Kaufmann-type ion source fed with methane as the process gas. The optical properties of...
Carrier location in low-bandgap Hg1-xCdxTe crystals, studied by photoluminescence (1991)
We report on Fourier transform photoluminescence studies, carried out on bulk Hgsub1minusxCdsubxTe. Using a double-modulation technique, luminescence in the 10 Mym range has been measured. The...
Jiang, X., Hillebrands, B., Harzer, J., Koidl, P., Wild, C.
We report on Brillouin light scattering investigations on chemical-vapor-deposited polycrystalline diamond films. Besides the longitudinal and two transverse acoustic bulk phonons, a Rayleigh surface...
Locher, R., Sah, R.E., Koidl, P., Wild, C.
Plasma deposition and properties of a-C:H are reviewed and recent results on the process characterization are reported. The role of process gas, plasma chemistry and plasma surface interaction is...
Texture formation in polycrystalline diamond films. (1990)
Herres, N., Koidl, P., Wild, C.
Structure and morphology of polycrystalline diamond films prepared by chemical vapor deposition (CVD) have been studied using x-ray texture analysis, angle-resolved optical reflection, and scanning...
Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te. (1990)
Lusson, A., Bruder, M., Koidl, P., Ramsteiner, M., Wagner, J.
We have studied In + implanted CdTe and Cd sub 0.23HG sub 0.77Te by resonant Raman scattering. The laser excitation was in resonance with the E sub 0 + Delta sub 0 band gap in CdTe or the E sub 1 gap...
Ralston, J.D., Dischler, B., Hiesinger, P., Koidl, P., Maier, M., Ramsteiner, M., ...
Using SIMS profiling temperature-dependent Hall measurements, electronic Raman scattering, and infra-red absorption, a detailed study is presented examining the effects of Si dopant behaviour on...
Amorphous hydrogenated carbon-germanium films for hard multilayer IR optical coatings. (1990)
Sah, R.E., Baumann, H., Koidl, P., Wild, C.
Diamondlike amorphous hydogenated carbon (a-C:H) films have found widespread use as hard coatings for IR optical applications. The refractive index of these films (n=2) allows the deposition of...
Structured ion energy distribution in radio frequency glow-discharge systems (1989)
the energy distribution of ions incident on the cathode (smaller electrode) in a capacitively coupled asymmetric rf discharge was measured for different process parameters. It was found that the ion...
Resonant Raman scattering of amorphous carbon and polycrystalline diamond films (1989)
Koidl, P., Ramsteiner, M., Wagner, J., Wild, C.
Resonant Raman scattering has been used to study amorphous carbon and polycrystalline diamond films. The incident photon energies were varied over the range 2.2-4.8 eV. In hydrogenated amorphous...
Plasma deposition, properties and structure of amorphous hydrogenated carbon films. (1989)
Dischler, B., Koidl, P., Ramsteiner, M., Wagner, J., Wild, C.
Plasma deposition and properties of a-C:H are reviewed. The role of process gas, plasma chemistry and plasma surface interaction is discussed. It is shown that the deposition energy of the...
Optical and structural characterization of CVD diamond (1989)
Herres, N., Koidl, P., Wagner, J., Wild, C.
Infrared and Raman spectroscopy as well as X-ray diffraction have been used to investigate polycrystalline diamond films prepared by hot filament assisted CVD or by filament assisted microwave plasma...
Ion energy distribution in the sheath of radio frequency discharges. (1989)
The dynamics of ions in the sheath of an asymmetric glow discharge system was studied by analyzing the energy of ions, impinging on the cathode (smaller electrode). The ion energy distributions (IED)...
Double modulation techniques in Fourier Transform infrared photoluminescence (1989)
Fuchs, F., Lusson, A., Koidl, P., Wagner, J.
FT photoluminescence is a powerful tool to study mid infrared emission. However, problems may arise from thermal background radiation. A new phase locked modulation technique is presented and will be...
Critical assessment of diamondlike carbon. (1989)
An overview is given on the deposition, properties and applications of dense amorphous carbon films with diamondlike properties. Emphasis will be on the condensation of energetic hydrocarbon ions...
A scanning CO2 laser interferometer is described, in which the test sample itself forms the interference cavity. Results for plane parallel plates of germanium and of galliumarsenide are presented...
Composition and structure of plasma deposited a-C:H,F films. (1988)
Fink, J., Nuecker, N., Sah, R.E., Koidl, P., Baumann, H., Bethge, K.
Proc.of the European Materials Research Society Meeting, Strasbourg, F, June 2-5, 1987
Dischler, B., Koidl, P., Pohl, F.
Bei einer Vorrichtung zur interferometrischen Pruefung der optischen Homogenitaet von transparenten plattenfoermigen Werkstuecken (22) wird die Veraenderung der optischen Schichtdicke durch eine...
Thermal gas effusion from hydrogenated amorphous carbon films (1987)
Hydrogenated amorphous carbon (a-C:H) films, deposited onto negatively biased substrates in a 13.56-MHz hydrocarbon glow discharge system, have been investigated by mass spectroscopic thermal...
Raman scattering from extremely thin hard amorphous carbon films (1987)
Koidl, P., Ramsteiner, M., Wagner, J., Wild, C.
Hard amorphous hydrogenated carbon (a-C:H) films with thicknesses varying from 10 to 2000 A were plasma deposited on Si or Ge and studied by Raman spectroscopy. Using optical multichannel detection...
Raman scattering form extremely thin a-C-H films deposited on semiconductors (1987)
Koidl, P., Ramsteiner, M., Wagner, J., Wild, C.
Hard amorphous carbon (a-C:H) films with thicknesses varying from 10 Angstroem to 2000 Angstroem were plasma-deposited on Si or Ge and studied by Raman spectroscopy. The main peak in the Raman...
Rain erosion resistance of hard carbon coated germanium. (1987)
Sah, R.E., Koidl, P., Schaefer, W.
Amorphous hydrogenated carbon (a-C:H) is a suitable material for durable anti-reflection coatings on Ge infrared windows. For the present investigations a-C:H-films were deposited onto single crystal...
Process monitoring of a-C-H plasma deposition (1987)
Koidl, P., Wagner, J., Wild, C.
The deposition process of amorphous hydrogenated carbon (a-C:H) in a 13.56 MHz hydrocarbon glow discharge system is investigated. Mass spectrometry was used to measure the relative abundance of the...
Plasma deposition of fluoro-hydrogenated amorphous carbon films (1987)
Sah, R.E., Dischler, B., Koidl, P.
Amorphous fluoro-hydrogenated carbon films (a-C:H,F) have been prepared in a 2.3 MHz glow discharge system from fluorinated benzenes, C6FmH(6-m) with 0 smaller than m smaller than 6. In addition,...
Koidl, P., Wagner, J., Wild, C.
Raman and photoluminescence spectroscopy are reviewed and discussed as tools for the characterization of hydrogenated amorphous carbon (a-C:H) films. Thereby emphasis is laid on hard, strongly...
Hydrogenated amorphous carbon films, deposited onto negatively biased substrates in a 13.56 MHz hydrocarbon glow discharge system, have been investigated by mass spectroscopic thermal effusion...
Hydrogen release from a-C/H films by MeV irradiation (1987)
Baumann, H., Rupp, T., Bethge, K., Koidl, P., Wild, C.
Amorphous hydrogenated hard carbon films deposited on silicon substrates from a rf-benzene plasma were irradiated with helium, nitrogen, neon and argon ions in the MeV range. The ion passage through...
Sander, P., Kaiser, U., Altebockwinkel, M., Wiedmann, L., Benninghoven, A., Sah, R.E., ...
Hydrogenated amorphous carbon layers (a-C:H) on silicon show substantial amounts of silicon carbide in the interface, which has been identified with x-ray photoelectron spectroscopy and Auger...
Composition and structure of plasma deposited a-C - H,F films (1987)
Fink, J., Nücker, N., Sah, R.E., Baumann, H., Bethge, K., Koidl, P.
Amorphous carbon films (a-C:H,F) were prepared from fluorinated benzenes. The films were investigated by optical spectroscopy, by depth profiling with nuclear reactions and by electron energy-loss...
Characterization of a-C - H films by raman and luminescence spectroscopy (1987)
Koidl, P., Ramsteiner, M., Wagner, J., Wild, C.
Raman and photoluminescence spectroscopy are reviewed and discussed as tools for the characterization of hydrogenated amorphous carbon (a-C:H) films. Thereby emphasis is laid on hard, strongly...
Fink, J., Nuecker, N., Sah, R.E., Koidl, P., Dischler, B.
Workshop ueber amorphe wasserstoffhaltige Kohlenstoffschichten, Physikzentrum,
Vorrichtung zur Pruefung der Homogenitaet der optischen Schichtdicke (1985)
Dischler, B., Koidl, P., Pohl, F.
Bei einer Vorrichtung zur Pruefung der Homogenitaet eines optisch transparenten Werkstoffes wird ein Probekoerper (4) mit zwei im wesentlichen planparallelen Begrenzungsflaechen (3, 12) mit Hilfe...
Bubenzer, A., Koidl, P., Pohl, F., Dischler, B.
Bei einer Vorrichtung zum Auftragen harter Kohlenstoffschichten durch Hochfrequenzplasmaabscheidung wird die das zu beschichtende Substrat (19) tragende Elektrode (5) mit einer Quarzabdeckung (22)...
Optical characterization of plasma deposited hard carbon coatings (1984)
Schirmer, O.F., Brandt, G., Bubenzer, A., Dischler, B., Koidl, P.
Elektronen-Energieverlust-Spektroskopie an a-C:H-Filmen. (1984)
Pflueger, J., Fink, J., Mueller-Heinzerling, T., Dischler, B., Bubenzer, A., Koidl, P.
48.Physikertagung gemeinsam mit der Fruehjahrstagung DPG, Festkoerperphysik, Muenster, 12.-17.Maerz 1984.
Structure and properties of as-deposited and annealed a-C:H thin films. (1984)
Koidl, P., Dischler, B., Bubenzer, A., Klausmann, E., Fink, J.
6th Internat.Conf.on Thin Films, Stockholm, S, August 13-17, 1984
Fink, J., Mueller-Heinzerling, T., Pflueger, J., Scheerer, B., Dischler, B., Koidl, P., ...
Physical Review B, 30(1984) S.4713-18
Dischler, B., Bubenzer, A., Koidl, P., Brandt, G., Fink, J.
Vortr.: 13. IR-Colloquium, Freiburg, 26.-27.April 1983
Fink, J., Mueller-Heinzerling, T., Pflueger, J., Bubenzer, A., Koidl, P., Crecelius, G.
Solid State Communications, 47(1983) S.687-91
OPTICAL ABSORPTION OF Co2+ IN ZnO (1976)
Polarized optical absorption spectra of Co2+ in ZnO are reported. The crystal field transitions from the 4A2 ground state to the 4T2(F), 4T1(F) and 2E(G) multiplets are analyzed in detail. These...
OPTICAL ABSORPTION OF Co2+ IN ZnO (1976)
Polarized optical absorption spectra of Co2+ in ZnO are reported. The crystal field transitions from the 4A2 ground state to the 4T2(F), 4T1(F) and 2E(G) multiplets are analyzed in detail. These...
OPTICAL ABSORPTION OF Co2+ IN ZnO (1976)
Polarized optical absorption spectra of Co2+ in ZnO are reported. The crystal field transitions from the 4A2 ground state to the 4T2(F), 4T1(F) and 2E(G) multiplets are analyzed in detail. These...