R. Nötzel

Details der Publikationsliste

Zeitraum

1992 - 2008

Anzahl

18

Co-Autoren

Size dependent exciton g-factor in self-assembled InAs/InP quantum dots (2008)

Van Bree, J., Bozkurt, M., Van Veldhoven, P. J., Nouwens, P. A., Nötzel, R., ...

We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height...

Liveness detection based on fine movements of the fingertip surface (2006)

Drahanský, M., Nötzel, R., Funk, W.

Modern GIS systems increasingly rely on server-side rendering and web services for the rendering of geographical and application-specific data for both efficiency and security reasons since the...

Heterogenous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-on-Insulator waveguide circuits (2006)

Roelkens, G, Brouckaert, J, Taillaert, D, Dumon, P, Bogaerts, W, Nötzel, R, ...

We present the heterogeneous integration of InP/InGaAsP photodetectors onto ultracompact Silicon-on-Insulator (SOI) waveguide circuits using benzocyclobutene (BCB) die to wafer bonding. This...

Spin-Splitting in a Two-Dimensional Electron System Determined by Nuclear Magnetic Relaxation and Magnetotransport Activation Measurements (1993)

Berg, A, Weiss, Dieter, Klitzing, K, Nötzel, R

The spin splitting observed in two- dimensional electron systems at high magnetic fields is not only determined by the single-electron Zeeman energy but also by many-particle effects....

Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs. (1992)

Klingenstein, M., Kuhl, J., Nötzel, R., Hülsmann, A., Schneider, J., Köhler, K., ...

GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 degree C) have been investigated in the time domain by electro-optic sampling. It could be shown...

Picosecond photodetectors fabricated on low temperature GaAs (1992)

Klingenstein, M., Kuhl, J., Nötzel, R., Ploog, K., Rosenzweig, J., Moglestue, C., ...

GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 degree C) have been investigated in the time domain by electro-optic sampling. It could be...