Zeitraum
2007 - 2008
Anzahl
2
Co-Autoren
Degradation of the minority carrier lifetime caused by Mn-correlated defects in Ga-implanted Si:P (2008)
Beljakowa, S., Pensl, G., Rommel, M.
P-doped FZ-silicon is intentionally contaminated with gallium (Ga) and manganese (Mn) by ion implantation. The implanted samples are annealed at elevated temperature and the electrical parameters of...
Determining the defect parameters of the deep aluminum-related defect center in silicon (2007)
Rosenits, P., Roth, T., Glunz, S.W., Beljakowa, S.