Scientific Commons: S. G. Pavlov

Molecular Spectroscopy with TeraHertz Quantum Cascade Lasers (2007)

Hübers, Heinz-Wilhelm, Pavlov, S.G., Richter, H., Semenov, A., Mahler, L., Tredicucci, A., ...

We have implemented quantum cascade lasers (QCLs) operating at about 2.5 THz in a spectrometer for high resolution molecular spectroscopy. One QCL has a Fabry-Perot resonator while the other is a...

Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon (2007)

Zhukavin, R. Kh., Tsyplenkov, V. V., Kovalevsky, K. A., Shastin, V. N., Pavlov, S. G., Böttger, U., ...

The effect of uniaxial stress on terahertz stimulated emission from phosphor and antimony donors in silicon excited by CO2 laser radiation was studied. The laser action originates from 2p0 → 1s...

Terahertz gain on shallow donor transitions in silicon (2007)

Zhukavin, R.Kh., Shastin, V.N., Hübers, Heinz-Wilhelm, Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., ...

Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a...

High Resolution Gas Phase Spectroscopy with a Quantum Cascade Laser at 2.5 THz (2006)

Hübers, Heinz-Wilhelm, Pavlov, S.G., Richter, H., Semenov, A.D., Tredicucci, A., Mahler, L., ...

We have performed high resolution spectroscopy of rotational lines of 12CH316OH in a THz spectrometer based on a 2.5 THz distributed feedback quantum cascade laser (QCL). The absolute frequency was...

High-resolution gas phase spectroscopy with a distributed feedback terahertz quantum cascade laser (2006)

Hübers, Heinz-Wilhelm, Pavlov, S.G., Richter, H., Semenov, A.D., Mahler, L., Tredicucci, A., ...

The quantum cascade laser is a powerful, narrow linewidth, and continous wave source of terahertz radiation. The authors have implemented a distributed feedback device in a spectrometer for...

Terahertz Silicon Lasers (2006)

Hübers, Heinz-Wilhelm, Pavlov, S.G., Shastin, V.N.

Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability...

Long wavelength response of unstressed and stressed Ge:Ga detectors (2006)

Hübers, Heinz-Wilhelm, Pavlov, S.G., Holldack, K., Schade, U., Wüstefeld, G.

Photoconductivity spectra of unstressed and stressed Ge:Ga detectors were measured. The ecperiments were performed with a polarizing step scan Fourier transform spectrometer using the synchrotron...

Heterodyne receiver at 2.5 THz with quantum cascade laser and hot electron bolometric mixer (2006)

Hübers, Heinz-Wilhelm, Pavlov, S.G., Richter, H., Semenov, A.D., Mahler, L., Tredicucci, A., ...

Quantum cascade lasers (QCLs) operating at 2.5 THz have been used for gas phase spectroscopy and as local oscillator in a heterodyne receiver. One QCL has a Fabry-Perot resonator while the other has...

Stimulated terahertz stokes emission of silicon crystals doped with antimony donors (2006)

Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., Carder, D.A., Phillips, P.J., ...

Silicon-based Brillouin-type terahertz laser (2006)

Pavlov, S G, Hovenier, J N, Klaassen, T O, Carder, D A, Phillips, P J, ...

Stimulated terahertz stokes emission of silicon crystals doped with antimony donors (2006)

Pavlov, S G, Hovenier, J N, Klaassen, T O, Carder, D A, Phillips, P J, ...

Terahertz lasers based on germanium and silicon (2005)

Hübers, H-W., Pavlov, S. G., Shastin, V. N.

Recent experimental and theoretical results of impurity doped germanium and silicon terahertz lasers are reviewed. Three different laser mechanisms exist in p-type germanium. Depending on the...

Terahertz quantum cascade laser as local oscillator in a heterodyne receiver (2005)

Pavlov, S. G., Semenov, A. D., Köhler, R., Mahler, I., Tredicucci, A., ...

Terahertz quantum cascade lasers have been investigated with respect to their performance as a local oscillator in a heterodyne receiver. The beam profile has been measured and transformed in to a...

D centers in intracenter Si:P lasers (2005)

Zhukavin, R.Kh., Pavlov, S.G., Kovalevsky, K.A., Riemann, H., Shastin, V.N.

Initial scientific uses of coherent synchrotron radiation in electron storage rings (2004)

Basov, D.N., Feikes, J., Fried, D., Holldack, K., Hubers, H.W., Kuske, P., ...

The terahertz (THz) and sub-THz region of the electromagnetic spectrum bridges the infrared and the microwave. This boundary region is beyond the normal reach of optical and electronic measurement...

Nonequilibrium electron distribution in terahertz intracentre silicon lasers (2004)

Pavlov, S.G., Orlova, E.E., Zhukavin, R.Kh., Shastin, V.N.

Optical excitation of shallow donor centres in silicon creates an inverted electron distribution on the Coulomb centres at low lattice temperature. The population inversion is formed due to the...

Stimulated terahertz emission from arsenic donors in silicon (2004)

Pavlov, S.G., Riemann, H., Abrosimov, N.V., Zhukavin, R.Kh., Shastin, V.N.

Stimulated emission has been obtained from intra-center donor transitions in silicon monocrystals doped by arsenic. The Si:As laser was optically excited by radiation from a CO2 laser. The emission...

Thz Silicon Lasers Based On Impurity State Transitions (2004)

Shastin, V.N., Pavlov, S.G., Zhukavin, R.Kh., Bekin, N.A.

The operating principles and recent results on THz lasers based on intracenter optical transitions of shallow donors in silicon under optical excitation are reviewed. The aspects of THz lasing from...

Generation of THz emission from donor centers in silicon under intracenter optical pumping (2004)

Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., Carder, D., Zhukavin, R.Kh., ...

Optical pumping of excited donor states in silicon crystals doped by antimony, phosphor, arsenic and bismuth impurity center by emission from a free electron laser yields stimulated terahertz...

Gain in Silicon Lasers Based on Shallow Donor Transitions (2004)

Zhukavin, R.Kh., Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., ...

The results of gain measurements for THz silicon lasers based on shallow donor intracenter optical transitions are presented. The experiments were performed unter optical excitation of neutral donor...

Sub-terahertz response of stressed and unstressed Ge:Ga photoconductive detectors (2004)

Pavlov, S.G., Holldack, K., Kuske, P., Schade, U., Wüstefeld, G.

Ge:Ga is a widely used detector material for applications at terahertz frequencies. Its response ranges from about 40 µm - 120 µm. If a compressive force is applied to the crystal the response...

Excitation Spectroscopy of Si:P THz Laser and Infrared Photoconductivity in Ge:Te (2004)

Nakata, H., Yokoyama, A., Hatou, T., Ohyama, T., Tsubouchi, N., Pavlov, S.G., ...

We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO2 lasers. The emission intensity decreases with increasing photon energy...

THz Spectroscopy of excited acceptor states in p-type germanium (2004)

Pavlov, S.G., Holldack, K., Kuske, P., Schade, U., Wüstefeld, G.

Nonequilibrium phonons in terahertz silicon lasers: building the intracenter population inversion (2004)

Pavlov, S.G., Zhukavin, R.Kh., Hovenier, J.N., Klaassen, T.O., Riemann, H., ...

The resolved terahertz emission in Si:P under resonant pumping of donor centres with picosecond optical pulses (2004)

Klaassen, T.O., Hovenier, J.N., Pavlov, S.G., Orlova, E.E., Zhukavin, R.Kh., ...

Stimulated THz Emission of Si.P under Nano- and Picosecond Resonant Optical Pumping of Donor Centres (2003)

Klaassen, T.O., Hovenier, J.N., Pavlov, S.G., Orlova, E.E., Zhukavin, R.Kh., Muravjov, A.V., ...

THZ Silicon Lasers (2003)

Pavlov, S.G., Hovenier, N., Klaassen, T., Riemann, H., Orlova, E.E., ...

THz Silicon Lasers (2003)

Pavlov, S.G., Hovenier, N., Klaassen, T., Riemann, H., Orlova, E.E., ...

Electrically pumped far-infrared population inversion in heterostructures doped by shallow impurity centers (2003)

Pavlov, S.G.

Electrically pumped far-infrared lasers based on intra-center optical transitions of shallow impurity centers embedded in the barrier of a semiconductor heterostructure are proposed. The principles...

Optically pumped terahertz semiconductor bulk lasers (2003)

Pavlov, S.G., Orlova, E.E., Zhukavin, R.Kh., Riemann, H., Nakata, H., ...

The principles of stimulated emission for the terahertz frequency range from shallow impurity centers in bulk semiconductors are discussed. Evidence of stimulated emission from group V donors...

Laser transitions under resonant optical pumping of donor centres in Si:P (2003)

Zhukavin, R.Kh., Gaponova, D.M., Muravjov, A.V., Orlova, E.E., Shastin, V.N., Pavlov, S.G., ...

Silicon lasers based on shallow donor centres (2003)

Shastin, V.N., Orlova, E.E., Zhukavin, R.Kh., Pavlov, S.G., Riemann, H.

Terahertz Silicon Lasers: Intracentre optical pumping (2003)

Pavlov, S.G., Rümmeli, M.H., Hovenier, J.N., Klaassen, T.O., Zhukavin, R.Kh., ...

Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation (2002)

Shastin, V.N., Zhukavin, R. Kh., Orlova, E.E., Pavlov, S.G., Rümmeli, M.H., ...

Far-infrared stimulated emission from optically excited bismuth donors in silicon (2002)

Pavlov, S.G., Rümmeli, M.H., Orlova, E.E., Shastin, V.N., ...

The emission spectra of optically pumped Si-based THz lasers (2002)

Klaassen, T. O., Hovenier, J. N., Zhukavin, R. Kh., Gaponova, D. M., Muravjov, A. V., Orolova, E. E., ...