A. Grohe, J. Nekarda, M. Hofmann, J. Catoir, B. Fleischhauer, E. Schneiderlöcher, ...
Conventional solar cell manufacturing based on screen-printing metallization implies several inherent dawbacks related to the technologies used as well as to the featured cell structure....
Ahrens, B., Löper, P., Goldschmidt, J.C., Glunz, S., Henke, B., Miclea, P.T., ...
Thermal processing of as-made fluorozirconate glasses which were additionally doped with neodymium and chlorine ions leads to enhanced upconversion fluorescence intensities. The samples were annealed...
Goldschmidt, J.C., Peters, M., Pronneke, L., Steidl, L., Zentel, R., Blasi, B., ...
In this study we present a theoretical and experimental analysis of the application of photonic band stop filters on top of photovoltaic fluorescent concentrators in order to increase the photon...
Surface passivation of boron diffused emitters for high efficiency solar cells (2008)
Benick, J., Hoex, B., Schultz-Wittmann, O., Glunz, S.
In order to utilize the full potential of solar cells fabricated on n-type silicon, it is necessary to achieve an excellent passivation on boron-doped emitters. As SiO2, the most effective...
Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung (2007)
Mayer, K., Aleman, M., Kray, D., Glunz, S., Mette, A., Preu, R., ...
WO 2008107194 A2 UPAB: 20080930 NOVELTY - In a precision process to modify the microstructure of a thin layer for the local introduction of doping agents and local application of a seed layer, the...
Hörteis, M., Richter, P., Glunz, S.
WO 2009071145 A2 UPAB: 20090629 NOVELTY - The method involves atomizing a hot-melt aerosol ink by an aerosol jet printing device (9), and applying a conductive contact to a substrate surface of a...
Investigation of laser-fired rear-side recombination properties using an analytical model (2006)
This paper presents the application of the analytical model for locally contacted rear sides recently published by Fischer to the determination of recombination losses of solar cells with fixed...
Phosphorus-doped SiC as an excellent p-type Si surface passivation layer (2006)
Janz, S., Riepe, S., Hofmann, M., Reber, S., Glunz, S.
The passivation properties of phosphorus-doped amorphous silicon carbide (a-SixC1-x) layers on monocrystalline Si wafers (floating zone, 1 Omega cm) have been investigated. The cleaning and the...
Biro, D., Preu, R., Glunz, S., Rein, S., Rentsch, J., Emanuel, G., ...
Selective laser ablation of anti-reflection coatings for novel metallization techniques (2006)
Grohe, A., Harmel, C., Knorz, A., Glunz, S., Preu, R., Willeke, G.
Schultz, O., Glunz, S., Warta, W., Preu, R., Grohe, A., Hermle, M., ...
Verfahren zum Herstellen einer metallischen Kontaktstruktur einer Solarzelle (2006)
Mette, A., Schetter, C., Glunz, S., Richter, P.
WO 2007085448 A1 UPAB: 20071008 NOVELTY - A method for manufacturing a metallic contact structure involves initially mounting a metallic contact structure on the surface (5) of the solar cell and...
Aleman, M., Mette, A., Glunz, S., Preu, R.
DE 102006040352 B3 UPAB: 20071031 NOVELTY - The method involves applying a layer of metallic powder (4) on a semiconductor substrate e.g. solar cell, and guiding a laser beam over the substrate for...
Schultz, O., Glunz, S., Hermle, M.
WO 2008052767 A2 UPAB: 20080627 NOVELTY - The solar cell (1) has a p-finger contact (3) and a n-finger contact (3') staying in electrical contact with a p-semiconductor and a n-semiconductor,...
Biro, D., Preu, R., Glunz, S., Rein, S., Rentsch, J., Emanuel, G., ...
Progress in the characterisation of laser-fired contacts (2005)
Grohe, A., Zastrow, U., Meertens, D., Houben, L., Brendle, W., Bilger, G., ...
Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht (2003)
Preu, R., Schneiderloechner, E., Glunz, S., Luedemann, R.
WO 200225742 A UPAB: 20020711 NOVELTY - The method involves applying a metal coating to the dielectric layer and heating the metal coating temporarily at a point or line under monitoring to form a...
Schumacher, J, Cuevas, A, Kerr, Mark, Glunz, S, King, Richard, ...
We have established a simulation model for phosphorus-doped silicon emitters using Fermi–Dirac statistics. Our model is based on a set of independently measured material parameters and on quantum...
Suppression of light degradation of carrier lifetimes in low-resistivity Cz-Si solar-cells (2001)
Saitoh, T., Wang, X., Hashigami, H., Abe, T., Igarashi, T., Glunz, S., ...
Investigations on low-cost back-contact silicon solar-cells (2001)
Kress, A., Breitenstein, O., Glunz, S., Fath, P., Willeke, G., Bucher, E.
Verfahren und Vorrichtung zur selektiven Kontaktierung von Solarzellen (2000)
WO 200060674 A UPAB: 20010116 NOVELTY - The electrical contacting method has laser light directed onto an optical microlens array (12), spaced from the material surface (2) coated with the dielectric...
Schumacher, J, Cuevas, A, Glunz, S, ...
Hebling, C., Glunz, S., Raeuber, A., Knobloch, J.
Production of a series-connected solar cell array, which is contacted at only one side, involves (a) producing and structuring an initially continuous semiconductor layer on an insulating substrate...
The method involves providing a base material having an n-type doped emitter layer provided a grid-formed surface layer. In the top region of the base material is formed an n(++) doping layer over...
Field effect passivation of high efficiency silicon solar cells (1993)
Aberle, A.G., Glunz, S., Warta, W.
In this paper effective surface recombination velocities Ssubeff at the rear Si-Si0sub2 interface of the presently best one-sun silicon solar cell structure are calculated on the basis of measured...
Aberle, A.G., Glunz, S., Warta, W.
The experimentally observed dependence of effective surface recombination velocity S(ind eff) at the Si-SIO2 interface on light-induced minority carrier excess concentration is compared with...
Glunz, S., Warta, W., Kopp, J., Aberle, A.G., Knobloch, J.
In comparison of simultaneously processed MOS test structures and solar cells the effect of variing postmetallization annealing time and temperature, oxidation temperature and ambient as well as the...
Impact of metallization techniques on 20 % efficient silicon solar cells (1991)
Kopp, I., Warta, W., Glunz, S., Knobloch, J., Aberle, A.G.
The damage to the Si-SiOsub2 interface by electron- beam in comparison to thermal (i.e. resistive heating) evaporation of Al and Ti is investigated for oxide thicknesses ranging from 14 to 105 nm....