14xx-nm high brightness tapered diode lasers grown by solid-source MBE (2006)
Kallenbach, S., Aidam, R., Losch, R., Kaufel, G., Kelemen, M.T., Mikulla, M., ...
We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6...
High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm (2005)
Kallenbach, S., Kelemen, M.T., Aidam, R., Lösch, R., Kaufel, G., Mikulla, M., ...
High-power spatially single-mode diode lasers at 1.4 - 1.5 µm wavelength are of interest as pump lasers for Raman and rare-earth doped fiber amplifiers as well as for material processing and for...
High-power high-brightness tapered diode lasers and amplifiers for eye-safe operation (2004)
Kallenbach, S., Kelemen, M.T., Aidam, R., Lösch, R., Kaufel, G., Mikulla, M., ...
Spatially single-mode high-power diode lasers and amplifiers are well-established as GaAs based devices at wavelengths around 1 mu. However, there are many applications such as pumping of Raman and...
Phase-resolved second-harmonic imaging with nonideal laser sources (2004)
Fiebig, M., Lottermoser, T., Fröhlich, D., Kallenbach, S.
An interferometric imaging setup is described that allows us to map the spatial distribution of the phase of a second-harmonic (SH) wave by using multimode laser sources with achromatic beam imaging...
Astigmatism and beam quality of high-brightness tapered diode lasers (2004)
Kelemen, M.T., Weber, J., Kallenbach, S., Pfahler, C., Mikulla, M., Weimann, G.
Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as molecular spectroscopy, fiber optic communication and frequency...
Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers (2004)
Aidam, R., Lösch, R., Walther, M., Driad, R., Kallenbach, S.
InP-based double heterojunction bipolar transistors (DHBTs) and aluminum free 14xx nm high power lasers were grown in a multiwafer solid source phosphorus molecular beam epitaxy system. The growth of...
Kallenbach, S, Doyen, N, Fanton D'Andon, M, Rougeon, F
The somatic diversity immunoglobulin and T-cell receptor diversity is largely provided by the junctional variation created during site-specific rearrangement of separately encoded gene segments....
The presence of direct repeats does not influence coding joint formation during V(D)J recombination.
Nourrit, F, Nguyen, Q T, Rougeon, F, Kallenbach, S
During the recombination process that assembles immunoglobulin and T-cell receptor gene segments, the coding ends to be joined are extensively processed. Contradictory reports have been made in the...
Goodhardt, M, Babinet, C, Lutfalla, G, Kallenbach, S, Cavelier, P, Rougeon, F
We have produced transgenic mice which synthesize chimeric mouse-rabbit immunoglobulin (Ig) kappa light chains following in vivo recombination of an injected unrearranged kappa gene. The exogenous...
Kallenbach, S, Doyen, N, Fanton D'Andon, M, Rougeon, F
The somatic diversity immunoglobulin and T-cell receptor diversity is largely provided by the junctional variation created during site-specific rearrangement of separately encoded gene segments....
The presence of direct repeats does not influence coding joint formation during V(D)J recombination.
Nourrit, F, Nguyen, Q T, Rougeon, F, Kallenbach, S
During the recombination process that assembles immunoglobulin and T-cell receptor gene segments, the coding ends to be joined are extensively processed. Contradictory reports have been made in the...
Goodhardt, M, Babinet, C, Lutfalla, G, Kallenbach, S, Cavelier, P, Rougeon, F
We have produced transgenic mice which synthesize chimeric mouse-rabbit immunoglobulin (Ig) kappa light chains following in vivo recombination of an injected unrearranged kappa gene. The exogenous...