S. Reber

Details der Publikationsliste

Zeitraum

1991 - 2009

Anzahl

61

Co-Autoren

Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements (2009)

Rosenits, P., Roth, T., Warta, W., Reber, S., Glunz, S.W.

A valuable nondestructive measurement and analysis method for determining individual excess carrier lifetimes in multilayer systems is presented. This is particularly interesting for the...

n-type emitter epitaxy for crystalline silicon thin-film solar cells (2008)

Schmich, E., Lautenschlager, H., Friess, T., Trenkle, F., Schillinger, N., Reber, S.

Crystalline silicon thin-film (cSiTF) solar cells are an attractive alternative to bulk silicon solar cells. At Fraunhofer ISE the concept of the epitaxial wafer equivalent (EpiWE)is followed, where...

Improvement of epitaxial crystalline silicon thin-film solar cells at Fraunhofer ISE (2008)

Schmich, E., Lindekugel, S., Reber, S.

Due to the increased costs of silicon feedstock, the interest in silicon thin-film solar cells has been intensified in the last years. The aim of this paper is to present improvements to the...

Emitter wrap-through structure for rear-side contacting of epitaxial thin-film solar cells (2008)

Mitchell, E.J., Reber, S.

The Epitaxy Wrap-through (EpiWT) cell concept is introduced. It combines the benefits of rear-side contacting with the low-cost potential of epitaxial crystalline silicon thin-film technology. Its...

Advanced optical confinement and further improvements for crystalline silicon thin film solar cells (2008)

Janz, S., Künle, M., Lindekugel, S., Reber, S.

Every silicon thin-film solar cell concept is dependent on an excellent optical confinement. As well as texturisation and an anti-reflection coating on the front side, the rear-side needs a reflector...

Verfahren zur Rekristallisierung von Schichtstrukturen mittels Zonenschmelzen, hierfuer verwendete Vorrichtung und dessen Verwendung (2007)

Reber, S., Eyer, A., Haas, F.

DE 102005043303 A1 UPAB: 20070430 NOVELTY - A method of recrystallizing a layer structure by zone melting comprises moving two linear heat sources relative to the layer in a perpendicular direction...

Vorrichtung und Verfahren zur kontinuierlichen Gasphasenabscheidung unter Atmosphaerendruck und deren Verwendung (2007)

Reber, S., Hurrle, A., Schillinger, N.

WO 2007033832 A2 UPAB: 20070517 NOVELTY - In a device for continuous atmospheric pressure gas phase deposition onto substrates, comprising a reaction chamber (1) with two opposite open sides, along...

Verfahren und Vorrichtung zur lokalen Dotierung von Festkoerpern sowie dessen Verwendung (2007)

Kray, D., Reber, S.

DE 102006003607 A1 UPAB: 20070927 NOVELTY - Method for localized doping of solid substrates, e.g. silicon substrates, comprises spraying the surface of the substrate with a stream of liquid...

Verfahren zur trockenchemischen Behandlung von Substraten, sowie dessen Verwendung (2007)

Reber, S., Willeke, G.

DE 102005058713 A1 UPAB: 20070822 NOVELTY - Purifying a silicon, ceramic, glass or quartz glass substrate with an etching gas comprising chlorine or a chlorine compound in a heated reaction chamber...

Silicon CVD deposition for low cost applications in photovoltaics (2007)

Schmich, E., Schillinger, N., Reber, S.

This paper presents a low cost application of high-temperature silicon CVD depositions for photovoltaics. Crystalline silicon thin-film (cSiTF) solar cells could be an attractive alternative to bulk...

Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme (2006)

Reber, S.

DE1004044709 A UPAB: 20060405 NOVELTY - Production of a doped semiconductor layer system comprises depositing an intermediate layer system (2) having partial layers on a substrate base layer (1), in...

Phosphorus-doped SiC as an excellent p-type Si surface passivation layer (2006)

Janz, S., Riepe, S., Hofmann, M., Reber, S., Glunz, S.

The passivation properties of phosphorus-doped amorphous silicon carbide (a-SixC1-x) layers on monocrystalline Si wafers (floating zone, 1 Omega cm) have been investigated. The cleaning and the...

Processing of C-SI thin-film solar cell on ceramic substrate with conductive SIC diffusion barrier layer (2006)

Janz, S., Reber, S., Habenicht, H., Lautenschlager, H., Schetter, C.

All work published so far on C-SiTF on ceramics was based on either non-conductive ceramics, or on "model" ceramics never able to cope with the cost requirements. For a wafer equivalent approach,...

Epitaxy of emitters on P-and N-type substrates for crystalline silicon solar cells (2006)

Schmich, E. ., Reber, S., Hees, J., Lautenschlager, H., Schillinger, N., Willeke, G.

This paper suggests epitaxy of silicon for emitter formation by high temperature CVD as an alternative to conventional processing for standard silicon wafer solar cells. Epitaxy could provide an...

Crystalline silicon thin-film solar cells on ZrSiO/sub4/ ceramic substrates (2002)

Kieliba, T., Bau, S., Schober, R., Osswald, D., Reber, S., Eyer, A., ...

The development of a low-cost substrate is one of the major technological challenges for crystalline Si thin-film solar cells. Zirconium silicate (ZrSiO/sub 4/) ceramics is a material which can meet...

Crystalline silicon thin-film solar-cells on silicon- nitride ceramic substrates (2001)

Stollwerck, G., Reber, S., Hassler, C.

Photo voltaics-the generation of electricity from sunlight-is a technically challenging but environmentally benign technology to generate electricity with a large economical potential. However, the...