Glatthaar, M., Giesecke, J., Kasemann, M., Haunschild, J., The, M., Warta, W., ...
We present a novel method to determine spatially resolved the dark saturation current of standard silicon solar cells. For this two electroluminescence images are taken at two different voltages....
Klauke, S., Görtz, M., Rein, S., Hoehl, D., Thomas, U., Eckhorn, R., ...
Spatially resolved silicon solar cell characterization using infrared imaging methods (2008)
Kasemann, M., Kwapil, M., Schubert, M., Habenicht, H., Walter, B., The, M., ...
We present a comprehensive overview over infrared imaging techniques for (electrical) silicon solar cell characterization. Recent method development in local series resistance imaging is reviewed in...
Diez, S., Rein, S., Roth, T., Glunz, S.W.
Temperature- and injection-dependent lifetime spectroscopy (TIDLS) as a method to characterize point defects in silicon with several energy levels is demonstrated. An intentionally...
Pilot-line processing of very large (21 x 21 cm²) and thin mc-Si solar cells (2007)
Clement, F., Preu, R., Reis, I.E., Biro, D., Rentsch, J., Zimme, M., ...
Accuracy of inline IV measurements under industrial conditions (2007)
Krieg, A., Weil, A., Schäffer, E., Hohl-Ebinger, J., Warta, W., Rein, S.
EP 2031650 A2 UPAB: 20090323 NOVELTY - The method involves determining base layer resistance of a semiconductor wafer e.g. multi-crystalline silicon wafer (1), by an inductive measuring method,...
Verfahren und Vorrichtung zur Inaktivierung von Trapping-Effekten in dotierten Halbleitern (2006)
Schubert, M., Rein, S., Isenberg, J., Warta, W., Glunz, S.W.
WO 2006092321 A1 UPAB: 20061103 NOVELTY - The method involves injecting subband photons from e.g. a laser source into a semiconductor (6), preferably heated to 60degreesC in order to empty the trap...
Biro, D., Preu, R., Glunz, S., Rein, S., Rentsch, J., Emanuel, G., ...
Biro, D., Preu, R., Glunz, S., Rein, S., Rentsch, J., Emanuel, G., ...
Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)
Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...
Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)
Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...
By combining data from temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS) measured by means of the microwave-detected photoconductance decay technique and the quasi-steady...
Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)
Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...
Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)
Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...
Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)
Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.
Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...
Rein, S., Rehrl, T., Warta, W., Glunz, S.W.
Carrier lifetime is very sensitive to electrically active defects. Apart from detecting the presence of recombination active defects, lifetime measurements allow for a direct identification of...
High-efficiency silicon solar cells for low-illumination applications (2002)
Glunz, S.W., Dicker, J., Esterle, M., Hermle, M., Isenberg, J., Kamerewerd, F., ...
Minority carrier lifetime degradation in boron-doped Czochralski silicon (2001)
Glunz, S.W., Rein, S., Lee, J.Y., Warta, W.
The minority carrier lifetime in boron-doped oxygen-contaminated Czochralski (Cz) silicon is strongly reduced under illumination or carrier injection. This process can be fully reversed by a 200...
Lee, J.Y., Peters, S., Rein, S., Glunz, S.W.
In p-type Czochralski-grown (Cz) silicon a light-induced degradation of the minority-carrier lifetime is well known in the literature. Reducing the extent of this degradation would significantly...
Degradation of carrier lifetime in Cz silicon solar cells (2001)
Glunz, S.W., Rein, S., Warta, W., Knobloch, J., Wettling, W.
Suppression of light degradation of carrier lifetimes in low-resistivity Cz-Si solar-cells (2001)
Saitoh, T., Wang, X., Hashigami, H., Abe, T., Igarashi, T., Glunz, S., ...
100 cm2 solar cells on Czochralski silicon with an efficiency of 20,2%: Short communication (2000)
Glunz, S.W., Köster, B., Leimenstoll, T., Rein, S., Schäffer, E., Knobloch, J., ...
Reduction of degradation losses in Cz-Si solar cells (1999)
Glunz, S.W., Rein, S., Warta, W., Knobloch, J., Wettling, W.
Comparison of Boron and Gallium doped p-type Czochralski silicon for photovoltaic application (1999)
On the degradation of Cz-silicon solar cells (1998)
Glunz, S.W., Rein, S., Warta, W., Knobloch, J., Wettling, W.
Nero, A.V., Leiden, S.M., Nolan, D.A., Price, P.N., Rein, S., Revzan, K.L, ...
A methodology is being developed for identifying 'high radon' areas by correlating actual indoor levels with local soil, housing, and meteorological data. In preliminary multiple regression analyses...