S. W. Glunz

Details der Publikationsliste

Zeitraum

1994 - 2009

Anzahl

166

Co-Autoren

Enhanced lateral current transport via the front N+ diffused layer of N-type high-efficiency back-junction back-contact silicon solar cells (2009)

Granek, F., Hermle, M., Huljic, D.M., Schultz-Wittmann, O., Glunz, S.W.

N-type back-contact back-junction solar cells were processed with the use of industrially relevant structuring technologies such as screen-printing and laser processing. Application of the low-cost...

Increasing the efficiency of fluorescent concentrator systems (2009)

Goldschmidt, J.C., Peters, M., Bösch, A., Helmers, H., Dimroth, F., Glunz, S.W., ...

This study examines concepts for increasing the efficiency of fluorescent concentrator systems. Different system sizes and configurations are investigated in detail by external quantum efficiency...

Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements (2009)

Rosenits, P., Roth, T., Warta, W., Reber, S., Glunz, S.W.

A valuable nondestructive measurement and analysis method for determining individual excess carrier lifetimes in multilayer systems is presented. This is particularly interesting for the...

Comprehensive analysis of advanced solar cell contacts consisting of printed fine-line seed layers thickened by silver plating (2009)

Pysch, D., Mette, A., Filipovic, A., Glunz, S.W.

This work presents a detailed analysis of a new two-layer process to contact industrial solar cells. However, most of the results seem to be transferable to standard screen print paste contacts. The...

Illumination-induced errors associated with suns-VOC measurements of silicon solar cells (2009)

Roth, T., Hohl-Ebinger, J., Grote, D., Schmich, E., Warta, W., Glunz, S.W., ...

I-SC-V-OC curves measured by the suns-V-OC method are widely used for solar cell characterization due to its being unaffected by series resistance effects. A common setup for this measurement system...

Stretched-exponential increase in the open-circuit voltage induced by thermal annealing of amorphous silicon-carbide heterojunction solar cells (2009)

Pysch, D., Ziegler, J., Becker, J.P., Suwito, D., Janz, S., Glunz, S.W., ...

In this letter, the annealing behavior of the open-circuit voltage improvement of n-doped amorphous silicon-carbide heterojunction solar cells is investigated in detail. We present our results of a...

Recent developments in rear-surface passivation at Fraunhofer ISE (2009)

Hofmann, M., Janz, S., Schmidt, C., Kambor, S., Suwito, D., Kohn, N., ...

Fraunhofer ISE has a long experience in the field of surface passivation for crystalline silicon wafers. Novel rear-surface passivation layer systems have led to excellent results. Using a...

Characterizing the light guiding of fluorescent concentrators (2009)

Goldschmidt, J.C., Peters, M., Hermle, M., Glunz, S.W.

Fluorescent concentrators have gained new research interest recently. The development of new material systems for this type of solar concentrator requires the testing of a wide range of materials....

Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon (2008)

Rüdiger, M., Trupke, T., Würfel, P., Roth, T., Glunz, S.W.

Due to their robustness against various experimental artifacts and the high sensitivity at low minority carrier concentrations, quasi-steady-state photoluminescence lifetime measurements are well...

PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells (2008)

M. Hofmann, S. Kambor, C. Schmidt, D. Grambole, J. Rentsch, S. W. Glunz, ...

A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface...

Laser chemical processing (LCP) - A versatile tool for microstructuring applications (2008)

Kray, D., Fell, A., Hopman, S., Mayer, K., Willeke, G.P., Glunz, S.W.

Laser Chemical Processing (LCP) is presented as a novel microstructuring method for multiple applications. Via the combination of a chemical liquid jet and a laser beam, thermochemical and...

Analysis of the Optical Properties of Screen-Printed and Aerosol-Printed and Plated Fingers of Silicon Solar Cells (2008)

R. Woehl, M. Hörteis, S. W. Glunz

One main efficiency loss in industrial solar cells is the shading of the cell caused by the metal front side contacts. With the aerosol-printing technique plus an additional light-induced plating...

Analysis of the current linearity at low illumination of high-efficiency back-junction back-contact silicon solar cells (2008)

Granek, F., Hermle, M., Glunz, S.W.

The relation between current and illumination intensity of three structures of high-efficiency back-junction back-contact silicon solar cells was analyzed. Both, n-type cells with non-diffused front...

Surface passivation schemes for high-efficiency n-type Si solar cells (2008)

Benick, J., Schultz-Wittmann, O., Schon, J., Glunz, S.W.

An effective passivation on the front side boron emitter is essential to utilize the full potential of solar cells fabricated on n-type silicon. However, recent investigations have shown that it is...

Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation (2008)

Hofmann, M., Schmidt, C., Kohn, N., Rentsch, J., Glunz, S.W., Preu, R.

A stack of hydrogenated amorphous silicon (a-Si) and PECVD-silicon oxide (SiOx) has been used as surface passivation layer for silicon wafer surfaces. Very good surface passivation could be reached...

Electronic properties of titanium in boron-doped silicon analyzed by temperature-dependent photoluminescence and injection-dependent photoconductance lifetime spectroscopy (2008)

Roth, T., Rüdiger, M., Warta, W., Glunz, S.W.

Temperature-dependent lifetime spectroscopy allows for the determination of defect parameters (like ratio of the carrier capture cross sections and energy level) of pointlike defects in silicon. This...

Fine line printed silicon solar cells exceeding 20% efficiency (2008)

Hörteis, M., Glunz, S.W.

Silicon solar cells with passivated rear side and laser-fired contacts were produced on float zone material. The front side contacts are built rip in two steps, seed and plate. The seed layer is...

Shading effects in back-junction back-contacted silicon colar cells (2008)

Hermle, M., Granek, F., Schultz, O., Glunz, S.W.

One of the most often mentioned advantages of back-junction back-contacted silicon solar cells is that this cell structure has no shading losses, because metallization fingers and busbars are both...

Positive effects of front surface field in high-efficiency back-contact back-junction N-type silicon solar cells (2008)

Granek, F., Hermle, M., Reichel, C., Grohe, A., Schultz-Wittmann, O., Glunz, S.W.

The role of the phosphorus-doped front surface field (FSF) in n-type back-contact back-junction silicon solar cells was analyzed. The FSF improves the quality of the front surface passivation and...

Progress in advanced metallization technology at Fraunhofer ISE (2008)

Glunz, S.W., Aleman, M., Bartsch, J., Bay, J., Bayer, K., Bergander, R., ...

Fraunhofer ISE's concept for an advanced metallization of silicon solar cells is based on a two-step process: the deposition of a seed layer to form a mechanical and electrical contact and the...

Improving the accuracy of suns-voc measurements using spectral mismatch correction (2008)

Roth, T., Hohl-Ebinger, J., Schmich, E., Warta, W., Glunz, S.W., Sinton, R. A.

ISC-VOC curves measured by the Suns-VOC method are widely used for solar cell characterization due to its unique feature of not being affected by series resistance effects. Although the accuracy of...

Titanium-related defect levels in silicon analyzed by temperature-dependent and injection-dependent photoluminescence lifetime spectroscopy (2008)

Roth, T., Rüdiger, M., Trupke, T., Glunz, S.W.

Temperature-dependent lifetime spectroscopy allows for the determination of defect parameters (like ratio of the carrier capture cross sections and energy level) of pointlike defects in silicon. This...

Laser-doped silicon solar cells by laser chemical processing (LCP) exceeding 20% efficiency (2008)

Kray, D., Aleman, M., Fell, A., Hopman, S., Mayer, K., Mesec, M., ...

The introduction of selective emitters underneath the front contacts of solar cells can considerably increase the cell efficiency. Thus, cost-effective fabrication methods for this process step would...

Spatially resolved silicon solar cell characterization using infrared imaging methods (2008)

Kasemann, M., Kwapil, M., Schubert, M., Habenicht, H., Walter, B., The, M., ...

We present a comprehensive overview over infrared imaging techniques for (electrical) silicon solar cell characterization. Recent method development in local series resistance imaging is reviewed in...

Analysis of the Optical Properties of Screen-Printed and Aerosol-Printed and Plated Fingers of Silicon Solar Cells (2008)

R. Woehl, M. Hörteis, S. W. Glunz

One main efficiency loss in industrial solar cells is the shading of the cell caused by the metal front side contacts. With the aerosol-printing technique plus an additional light-induced plating...

PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells (2008)

M. Hofmann, S. Kambor, C. Schmidt, D. Grambole, J. Rentsch, S. W. Glunz, ...

A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface...

Comparison of photoconductance- and photoluminescence-based lifetime measurement techniques (2008)

Roth, T., Rosenits, P., Rüdiger, M., Warta, W., Glunz, S.W.

Accurate measurements of the injection-dependent excess carrier lifetime of silicon samples are essential for device optimization and controlling of solar cell processes. This excess carrier lifetime...

Advanced upconverter systems with spectral and geometric concentration for high upconversion efficiencies (2008)

Goldschmidt, J.C., Löper, P., Fischer, S., Janz, S., Peters, M., Glunz, S.W., ...

In this paper we present an advanced upeonverter system concept to reduce the sub-bandgap losses of silicon solar cells. We address the issue of the narrow absorption range of common upconverter...

Cobalt related defect levels in silicon analyzed by temperature- and injection-dependent lifetime spectroscopy (2007)

Diez, S., Rein, S., Roth, T., Glunz, S.W.

Temperature- and injection-dependent lifetime spectroscopy (TIDLS) as a method to characterize point defects in silicon with several energy levels is demonstrated. An intentionally...

Diffusion lengths of silicon solar cells from luminescence images (2007)

Würfel, P., Trupke, T., Puzzer, T., Schäffer, E., Warta, W., Glunz, S.W.

A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafers and in silicon solar cells is introduced. The method, which is based on measuring the ratio of...

High-Efficiency Crystalline Silicon Solar Cells (2007)

S. W. Glunz

The current cost distribution of a crystalline silicon PV module is clearly dominated by material costs, especially by the costs of the silicon wafer. Therefore cell designs that allow the use of...

Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste (2007)

Mette, A., Pysch, D., Emanuel, G., Erath, D., Preu, R., Glunz, S.W.

This work presents the results of a detailed series resistance characterization of silicon solar cells with screen-printed front contacts using hotmelt silver paste. Applying the hotmelt technology...

Electronic properties and dopant pairing behavior of manganese in boron-doped silicon (2007)

Roth, T., Rosenits, P., Diez, S., Glunz, S.W.

Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy (DLTS), injection-dependent lifetime spectroscopy, and...

High-Efficiency Crystalline Silicon Solar Cells (2007)

S. W. Glunz

The current cost distribution of a crystalline silicon PV module is clearly dominated by material costs, especially by the costs of the silicon wafer. Therefore cell designs that allow the use of...

Verfahren und Vorrichtung zur Inaktivierung von Trapping-Effekten in dotierten Halbleitern (2006)

Schubert, M., Rein, S., Isenberg, J., Warta, W., Glunz, S.W.

WO 2006092321 A1 UPAB: 20061103 NOVELTY - The method involves injecting subband photons from e.g. a laser source into a semiconductor (6), preferably heated to 60degreesC in order to empty the trap...

BICON: High concentration PV using one-axis tracking and silicon concentrator cells (2006)

Mohr, A., Roth, T., Glunz, S.W.

BICON is a two-stage concentrator system developed at Fraunhofer ISE which is one-axis tracked. The innovation of this one-axis tracked system is that it enables a high geometrical concentration of...

High-efficiency solar cells on phosphorus gettered multicrystalline silicon substrates: Short communication. Accelerated publication (2006)

Schultz, O., Glunz, S.W., Riepe, S., Willeke, G.P.

Measurements of the dislocation density are compared with locally resolved measurements of carrier lifetime for p-type multicrystalline silicon. A correlation between dislocation density and carrier...

New concepts for high-efficiency silicon solar cells (2006)

Glunz, S.W.

This paper gives an overview about recent activities in the industrial application of high-efficiency monocrystalline silicon solar cells. It also presents the latest results achieved at Fraunhofer...

The role of silicon interstitials in the formation of boron-oxygen defects in crystalline silicon (2005)

MacDonald, D., Deenapanray, P.N.K., Cuevas, A., Diez, S., Glunz, S.W.

Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in...

Multicrystalline silicon solar cells exceeding 20% efficiency (2004)

Schultz, O., Glunz, S.W., Willeke, G.P.

This paper presents the first conversion efficiency above 20% for a multicrystalline silicon solar cell. The application of wet oxidation for rear surface passivation significantly reduces the...

Influence of high-temperature processes on multicrystalline silicon (2004)

Schultz, O., Riepe, S., Glunz, S.W.

Several combinations of oxidation and phosphorus diffusion processes suitable for silicon solar cell processing were applied to solar grade multicrystalline silicon. This resulted in drastic changes...

Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)

Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.

Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...

Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)

Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.

Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...

Electronic properties of the metastable defect in boron-doped Czochralski silicon: unambiguous determination by advanced lifetime spectroscopy (2003)

Rein, S., Glunz, S.W.

By combining data from temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS) measured by means of the microwave-detected photoconductance decay technique and the quasi-steady...

Imaging method for laterally resolved measurement of minority carrier densities and lifetimes: measurement principle and first applications (2003)

Isenberg, J., Riepe, S., Glunz, S.W., Warta, W.

Carrier density imaging, a further development of the infrared lifetime mapping technique [Bail et al., Proceedings 28th IEEE-PVSC (2000)], is presented as an extremely fast, spatially resolved...

Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)

Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.

Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...

Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)

Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.

Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...

Temperature and injection-dependent lifetime spectroscopy of copper-related defects silicon (2003)

Macdonald, D., Cuevas, A., Rein, S., Lichtner, P., Glunz, S.W.

Temperature- and injection-dependent lifetime measurements have been made on single-crystal silicon wafers containing deliberately introduced Cu precipitates. Applying the Shockley-Read-Hall model to...

Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions (2002)

Rein, S., Rehrl, T., Warta, W., Glunz, S.W.

Carrier lifetime is very sensitive to electrically active defects. Apart from detecting the presence of recombination active defects, lifetime measurements allow for a direct identification of...

Laser-fired rear contacts for crystalline silicon solar cells (2002)

Schneiderlöchner, E., Preu, R., Lüdemann, R., Glunz, S.W.

From today's viewpoint future solar cells will be thinner, of higher efficiency and produced in greater numbers. A solar cell concept able to fit these developments could be the passivated emitter...

Minority carrier lifetime degradation in boron-doped Czochralski silicon (2001)

Glunz, S.W., Rein, S., Lee, J.Y., Warta, W.

The minority carrier lifetime in boron-doped oxygen-contaminated Czochralski (Cz) silicon is strongly reduced under illumination or carrier injection. This process can be fully reversed by a 200...

Improvement of charge minority-carrier lifetime in p(Boron)-type Czochralski silicon by rapid thermal annealing (2001)

Lee, J.Y., Peters, S., Rein, S., Glunz, S.W.

In p-type Czochralski-grown (Cz) silicon a light-induced degradation of the minority-carrier lifetime is well known in the literature. Reducing the extent of this degradation would significantly...

Laser micromachining for applications in thin film technology. (2000)

Pfleging, W., Ludwig, A., Seemann, K., Preu, R., Mäckel, H., Glunz, S.W.

Spring Meeting of the European Materials Research Society, Strasbourg, F, June 1-4, 1999

Screen-printed solar cells with mesh-structured emitters (1998)

Reis, I. E., Hahne, P., Huljic, D.M., Glunz, S.W., Wettling, W.

Mesh-structured emitter solar cells (MESC) with evaporated contacts have shown e fficiencies up to 22.7 %. For further simplification of the MESC cell the photol ithographically defined front...