Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.
In this paper the application of thin high-k dielectrics as capping layers on oxide/nitride/oxide memory stacks with respect to suppression of electron injection from the gate electrode during erase...
Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.
In this paper the application of thin high-k dielectrics as capping layers on oxide/nitride/oxide memory stacks with respect to suppression of electron injection from the gate electrode during erase...
Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., Frey, L.
High-k dielectrics exhibit strong variations in their electrical characteristics on the nanometer scale due to morphology alteration. Therefore, electrical measurement techniques with nanometer...
Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., ...
Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from...
HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)
Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.
The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...
HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories (2008)
Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.
The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap...
Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., ...
Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from...
In dieser Arbeit wird der Einsatz von Hafniumsilicat (HfxSiyO4), als ausgewählter Vertreter der Schichten hoher Dielektrizitätskonstante im Gatedielektrikum von haftstellenbasierten...
In dieser Arbeit wird der Einsatz von Hafniumsilicat (HfxSiyO4), als ausgewählter Vertreter der Schichten hoher Dielektrizitätskonstante im Gatedielektrikum von haftstellenbasierten...
Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., ...
High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous...
Hafnium silicate as control oxide in non-volatile memories (2007)
Erlbacher, T., Bauer, A.J., Ryssel, H.
SONOS-type MIS capacitors with hafnium silicate as a control oxide are characterized and compared to devices featuring a conventional SONOS gate stack. Write operation is comparable for both gate...
Hafnium silicate as control oxide in non-volatile memories (2007)
Erlbacher, T., Bauer, A.J., Ryssel, H.
SONOS-type MIS capacitors with hafnium silicate as a control oxide are characterized and compared to devices featuring a conventional SONOS gate stack. Write operation is comparable for both gate...