Th Stohlker

Details der Publikationsliste

Zeitraum

1997 - 2007

Anzahl

10

Co-Autoren

Study of electron bremsstrahlung in strong coulomb fields at the ESR storage ring (2007)

Ludziejewski Th, Th. Stohlker, S. Keller, H. Beyer, F. Bosch, O. Brinzanescu, ...

Electron bremsstrahlung has been investigated for collisions of 223.2 MeV/amu He-like uranium ions with N 2 and Ar gaseous targets. The doubly differential cross-sections for bremsstrahlung are...

Using channeling properties for studying the impact parameter dependence of electron capture by 20 MeV/u uranium ions in a silicon crystal (2007)

Testa, E., Abufager, P.N., Bosch, F., Brauning-Demain, A., Brauning, H., Chevallier, M., ...

The impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$ ions has been studied by means of channeling in a 11 $\mu$m thick silicon crystal. Such ions are far from their equilibrium...

Using channeling properties for studying the impact parameter dependence of electron capture by 20 MeV/u uranium ions in a silicon crystal (2007)

Testa, E., Abufager, P.N., Bosch, F., Brauning-Demain, A., Brauning, H., Chevallier, M., ...

The impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$ ions has been studied by means of channeling in a 11 $\mu$m thick silicon crystal. Such ions are far from their equilibrium...

Using channeling properties for studying the impact parameter dependence of electron capture by 20 MeV/u uranium ions in a silicon crystal (2007)

Testa, E., Abufager, P.N., Bosch, F., Brauning-Demain, A., Brauning, H., Chevallier, M., ...

The impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$ ions has been studied by means of channeling in a 11 $\mu$m thick silicon crystal. Such ions are far from their equilibrium...

Using channeling properties for studying the impact parameter dependence of electron capture by 20 MeV/u uranium ions in a silicon crystal (2007)

Testa, E., Abufager, P.N., Bosch, F., Brauning-Demain, A., Brauning, H., Chevallier, M., ...

The impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$ ions has been studied by means of channeling in a 11 $\mu$m thick silicon crystal. Such ions are far from their equilibrium...

Using channeling properties for studying the impact parameter dependence of electron capture by 20 MeV/u uranium ions in a silicon crystal (2007)

Testa, E., Abufager, P.N., Bosch, F., Brauning-Demain, A., Brauning, H., Chevallier, M., ...

The impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$ ions has been studied by means of channeling in a 11 $\mu$m thick silicon crystal. Such ions are far from their equilibrium...

Using channeling properties for studying the impact parameter dependence of electron capture by 20 MeV/u uranium ions in a silicon crystal (2007)

Testa, E., Abufager, P.N., Bosch, F., Brauning-Demain, A., Brauning, H., Chevallier, M., ...

The impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$ ions has been studied by means of channeling in a 11 $\mu$m thick silicon crystal. Such ions are far from their equilibrium...