NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. i) The Au Schottky barrier height to [...] was measured as a function of alloy...
Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD (2006)
Kim, Nam-Heok, Park, J.-H., Mawst, Luke J., Kuech, Thomas F., Kanskar, M.
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Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells (2006)
Yeh, Jeng-Ya, Mawst, Luke J., Khandekar, Anish A., Kuech, Thomas F., Vurgaftman, I., Meyer, J.R., ...
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Gonzalez-Debs, M., Cederberg, J.G., Biefeld, R.M., Kuech, Thomas F.
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Khandekar, Anish A., Hawkins, B.E., Kuech, Thomas F., Yeh, Jeng-Ya, Mawst, Luke J., Meyer, J.R., ...
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Liu, Z.Y., Saulys, D.A., Kuech, Thomas F.
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Kimura, Akitaka, Paulson, C.A., Tang, H.F., Kuech, Thomas F.
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Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te (2004)
Liu, Z.Y., Gokhale, A.A., Mavrikakis, M., Saulys, D.A., Kuech, Thomas F.
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Dwikusuma, F., Kuech, Thomas F.
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SiGe relaxation on silicon-on-insulator substrates: an experimental and modeling study (2003)
Rehder, E.M., Inoki, C.K., Kuan, T.S., Kuech, Thomas F.
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A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions (2003)
Liu, Z.Y., Kuech, Thomas F., Saulys, D.A.
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Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates (2003)
Khandekar, Anish A., Kuech, Thomas F., Babcock, Susan E., Suryanarayanan, G.
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Rickert, K.A., Ellis, A.B., Himpsel, F.J., Lu, H., Schaff, W., Redwing, J.M., ...
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Kim, Jong Kyu, Lee, Jong-Lam, Rickert, K.A., Ellis, A.B., Himpsel, F.J., Dwikusuma, F., ...
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n-GaN surface treatments for metal contacts studied via X-ray photoemission spectroscopy (2002)
Rickert, K.A., Ellis, A.B., Himpsel, F.J., Jingxi Sun, Kuech, Thomas F.
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Paulson, C.A., Ellis, A.B., Moran, P.D., Kuech, Thomas F.
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The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy (2002)
Zhang, L., Tang, H.F., Schieke, J., Mavrikakis, M., Kuech, Thomas F.
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Oriented crystallization of GaSb on a patterned, amorphous Si substrate (2001)
Yi, S.S., Moran, P.D., Zhang, X., Cerrina, F., Carter, J., Smith, H.I., ...
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Zhang, L., Tang, H.F., Kuech, Thomas F.
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Heterogeneous integration: From substrate technology to active packaging (2001)
Brown, April S., Jokerst, Nan Marie, Doolittle, Alan, Brooke, Martin, Kuech, Thomas F., Seo, Sang-Woo, ...
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Moran, P.D., Chow, D., Hunter, A., Kuech, Thomas F.
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Experimental test for elastic compliance during growth on glass-bonded compliant substrates (2000)
Moran, P.D., Hansen, D.M., Matyi, R.J., Mawst, Luke J., Kuech, Thomas F.
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Cederberg, J.G., Culp, T.D., Bieg, B., Pfeiffer, D., Winter, C.H., Bray, K.L., ...
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Chemical bonding and electronic properties of SeS2-treated GaAs(100) (1999)
Jingxi Sun, Dong Ju Seo, O'Brien, W.L., Himpsel, F.J., Ellis, A.B., Kuech, Thomas F.
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Moran, P.D., Hansen, D.M., Matyi, R.J., Cederberg, J.G., Mawst, Luke J., Kuech, Thomas F.
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Defect Engineering in Compound Semiconductor (1998)
The use of "molecular' doping sources was extended to achieve new and controlled defect structures. The controlled introduction of oxygen from the oxygen doping source, (C2H5)2AlOC2H5, developed...
Defects and Interfacial Structure of Bonded Interfaces (1998)
The growth of lattice mismatched epitaxial layers on a binary compound semiconductor interface can lead to a high density of defects, such as dislocations, that can degrade subsequent device...
Generation of Large-Area, Crack-Free GaN Layers on Si Substrates (1998)
The development of truly compliant layers, compatible with Si-based tooling, was investigated for the growth of GaN on a Si substrate. For this project, thin Si layers were fabricated on a metal...
Defect Engineering and Defect Complexes in Compound Semiconductors Alloys (1998)
This grant investigated various aspects of defect-engineered compound semiconductor films and heterostructures. The research studied in detail the impact of intentional defect introduction into...
Defect Engineering Through Substrate Design (1998)
Kuech, Thomas F., Babcock, Susan E.
A comprehensive program in the control of extended defects associated with the growth of large lattice-mismatched materials was undertaken. This program was aimed at understanding the interaction of...
Photoluminescence and free carrier interactions in erbium-doped GaAs (1998)
Culp, T.D., Cederberg, J.G., Bieg, B., Kuech, Thomas F., Bray, K.L., Pfeiffer, D., ...
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Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er (1998)
Hansen, D.M., Zhang, A.R., Perkins, N.R., Safvi, S., Zhang, L., Bray, K.L., ...
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Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy (1998)
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Metal-Organic Vapor Phase Epitaxy of Controlled Deep Level Structures. (1997)
Kuech, Thomas F., Bray, Kevin L.
The controlled introduction of oxygen into GaAs and In(x)Ga(1-x)As during metal organic vapor phase epitaxy was studied through the development of unique oxygen doping sources. The electrical,...
Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure (1997)
Culp, T.D., Hommerich, U., Redwing, J.M., Kuech, Thomas F., Bray, K.L.
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Ohmic contacts to n-GaN using PtIn2 (1997)
Ingerly, D.B., Chang, Y.A., Perkins, N.R., Kuech, Thomas F.
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Nayak, S., Huang, J.-W., Redwing, J.M., Savage, D.E., Lagally, Max G., Kuech, Thomas F.
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Garni, B., Ma, Jian, Perkins, N.R., Liu, Jutong, Kuech, Thomas F., Lagally, Max G.
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A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation (1996)
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High temperature adduct formation of trimethylgallium and ammonia (1996)
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A near-field scanning optical microscopy study of the photoluminescence from GaN films (1996)
Liu, Jutong, Perkins, N.R., Horton, M.N., Redwing, J.M., Tischler, M.A., Kuech, Thomas F.
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Bhattacharya, A., Mawst, Luke J., Nayak, S., Li, J., Kuech, Thomas F.
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Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy (1996)
Huang, J.-W., Kuech, Thomas F., Hongqiang Lu, Bhat, I.
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Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy (1996)
Jian Ma, Garni, B., Perkins, N.R., O'Brien, W.L., Kuech, Thomas F., Lagally, Max G.
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Huang, J.-W., Bray, K.L., Kuech, Thomas F.
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Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide (1995)
Huang, J.-W., Kuech, Thomas F., Anderson, T.J.
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Chen, Charlie Chung-Ping, Chang, Y.A., Kuech, Thomas F.
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Geisz, J.F., Kuech, Thomas F., Ellis, A.B.
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PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition (1995)
Lin, C.-F., Chang, Y.A., Pan, N., Huang, J.-W., Kuech, Thomas F.
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Huang, J.-W., Kuech, Thomas F.
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Redwing, J.M., Kuech, Thomas F., Gordon, D.C., Vaartstra, B.A., Lau, S.S.
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Schottky enhancement of reacted NiAl/n-GaAs contacts (1994)
Chen, Charlie Chung-Ping, Chang, Y.A., Kuech, Thomas F.
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High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition (1994)
Chen, Charlie Chung-Ping, Chang, Y.A., Huang, J.-W., Kuech, Thomas F.
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Ryan, J.M., Huang, J.-W., Kuech, Thomas F., Bray, K.L.
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Recent advances in metal-organic vapor phase epitaxy (1992)
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NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. i) The Au Schottky barrier height to [...] was measured as a function of alloy...
Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates
Suryanarayanan, G., Khandekar, Anish A., Kuech, Thomas F., Babcock, Susan E.
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Cederberg, J.G., Bray, K.L., Kuech, Thomas F.
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