Thomas F. Kuech

Details der Publikationsliste

Zeitraum

1981 - 2006

Anzahl

58

Co-Autoren

Investigations of Schottky barrier structures in compound semiconductors: I. HgTe on CdTe: a lattice-matched Scottky barrier. II. Au-Cd barriers to CdTe. III. Au barriers on In(x)Ga(1-x)P (2006)

Kuech, Thomas F.

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. i) The Au Schottky barrier height to [...] was measured as a function of alloy...

Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD (2006)

Kim, Nam-Heok, Park, J.-H., Mawst, Luke J., Kuech, Thomas F., Kanskar, M.

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Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells (2006)

Yeh, Jeng-Ya, Mawst, Luke J., Khandekar, Anish A., Kuech, Thomas F., Vurgaftman, I., Meyer, J.R., ...

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Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb/GaSb quantum well interfaces (2005)

Gonzalez-Debs, M., Cederberg, J.G., Biefeld, R.M., Kuech, Thomas F.

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Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates (2005)

Khandekar, Anish A., Hawkins, B.E., Kuech, Thomas F., Yeh, Jeng-Ya, Mawst, Luke J., Meyer, J.R., ...

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Improved characteristics for Au/n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation (2004)

Liu, Z.Y., Saulys, D.A., Kuech, Thomas F.

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Epitaxial GaN1-yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy (2004)

Kimura, Akitaka, Paulson, C.A., Tang, H.F., Kuech, Thomas F.

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Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te (2004)

Liu, Z.Y., Gokhale, A.A., Mavrikakis, M., Saulys, D.A., Kuech, Thomas F.

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X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism (2003)

Dwikusuma, F., Kuech, Thomas F.

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SiGe relaxation on silicon-on-insulator substrates: an experimental and modeling study (2003)

Rehder, E.M., Inoki, C.K., Kuan, T.S., Kuech, Thomas F.

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A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions (2003)

Liu, Z.Y., Kuech, Thomas F., Saulys, D.A.

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Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates (2003)

Khandekar, Anish A., Kuech, Thomas F., Babcock, Susan E., Suryanarayanan, G.

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X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN (2003)

Rickert, K.A., Ellis, A.B., Himpsel, F.J., Lu, H., Schaff, W., Redwing, J.M., ...

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X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN (2002)

Kim, Jong Kyu, Lee, Jong-Lam, Rickert, K.A., Ellis, A.B., Himpsel, F.J., Dwikusuma, F., ...

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n-GaN surface treatments for metal contacts studied via X-ray photoemission spectroscopy (2002)

Rickert, K.A., Ellis, A.B., Himpsel, F.J., Jingxi Sun, Kuech, Thomas F.

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Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy (2002)

Paulson, C.A., Ellis, A.B., Moran, P.D., Kuech, Thomas F.

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The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy (2002)

Zhang, L., Tang, H.F., Schieke, J., Mavrikakis, M., Kuech, Thomas F.

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Oriented crystallization of GaSb on a patterned, amorphous Si substrate (2001)

Yi, S.S., Moran, P.D., Zhang, X., Cerrina, F., Carter, J., Smith, H.I., ...

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Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy (2001)

Zhang, L., Tang, H.F., Kuech, Thomas F.

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Heterogeneous integration: From substrate technology to active packaging (2001)

Brown, April S., Jokerst, Nan Marie, Doolittle, Alan, Brooke, Martin, Kuech, Thomas F., Seo, Sang-Woo, ...

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Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding (2001)

Moran, P.D., Chow, D., Hunter, A., Kuech, Thomas F.

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Experimental test for elastic compliance during growth on glass-bonded compliant substrates (2000)

Moran, P.D., Hansen, D.M., Matyi, R.J., Mawst, Luke J., Kuech, Thomas F.

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Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium (1999)

Cederberg, J.G., Culp, T.D., Bieg, B., Pfeiffer, D., Winter, C.H., Bray, K.L., ...

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Chemical bonding and electronic properties of SeS2-treated GaAs(100) (1999)

Jingxi Sun, Dong Ju Seo, O'Brien, W.L., Himpsel, F.J., Ellis, A.B., Kuech, Thomas F.

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InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality (1999)

Moran, P.D., Hansen, D.M., Matyi, R.J., Cederberg, J.G., Mawst, Luke J., Kuech, Thomas F.

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Defect Engineering in Compound Semiconductor (1998)

Kuech, Thomas F.

The use of "molecular' doping sources was extended to achieve new and controlled defect structures. The controlled introduction of oxygen from the oxygen doping source, (C2H5)2AlOC2H5, developed...

Defects and Interfacial Structure of Bonded Interfaces (1998)

Kuech, Thomas F.

The growth of lattice mismatched epitaxial layers on a binary compound semiconductor interface can lead to a high density of defects, such as dislocations, that can degrade subsequent device...

Generation of Large-Area, Crack-Free GaN Layers on Si Substrates (1998)

Kuech, Thomas F.

The development of truly compliant layers, compatible with Si-based tooling, was investigated for the growth of GaN on a Si substrate. For this project, thin Si layers were fabricated on a metal...

Defect Engineering and Defect Complexes in Compound Semiconductors Alloys (1998)

Kuech, Thomas F.

This grant investigated various aspects of defect-engineered compound semiconductor films and heterostructures. The research studied in detail the impact of intentional defect introduction into...

Defect Engineering Through Substrate Design (1998)

Kuech, Thomas F., Babcock, Susan E.

A comprehensive program in the control of extended defects associated with the growth of large lattice-mismatched materials was undertaken. This program was aimed at understanding the interaction of...

Photoluminescence and free carrier interactions in erbium-doped GaAs (1998)

Culp, T.D., Cederberg, J.G., Bieg, B., Kuech, Thomas F., Bray, K.L., Pfeiffer, D., ...

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Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er (1998)

Hansen, D.M., Zhang, A.R., Perkins, N.R., Safvi, S., Zhang, L., Bray, K.L., ...

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Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy (1998)

Zhang, R., Kuech, Thomas F.

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Metal-Organic Vapor Phase Epitaxy of Controlled Deep Level Structures. (1997)

Kuech, Thomas F., Bray, Kevin L.

The controlled introduction of oxygen into GaAs and In(x)Ga(1-x)As during metal organic vapor phase epitaxy was studied through the development of unique oxygen doping sources. The electrical,...

Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure (1997)

Culp, T.D., Hommerich, U., Redwing, J.M., Kuech, Thomas F., Bray, K.L.

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Ohmic contacts to n-GaN using PtIn2 (1997)

Ingerly, D.B., Chang, Y.A., Perkins, N.R., Kuech, Thomas F.

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Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) (1996)

Nayak, S., Huang, J.-W., Redwing, J.M., Savage, D.E., Lagally, Max G., Kuech, Thomas F.

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Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy (1996)

Garni, B., Ma, Jian, Perkins, N.R., Liu, Jutong, Kuech, Thomas F., Lagally, Max G.

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A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation (1996)

Liu, Jutong, Kuech, Thomas F.

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High temperature adduct formation of trimethylgallium and ammonia (1996)

Thon, A., Kuech, Thomas F.

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A near-field scanning optical microscopy study of the photoluminescence from GaN films (1996)

Liu, Jutong, Perkins, N.R., Horton, M.N., Redwing, J.M., Tischler, M.A., Kuech, Thomas F.

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Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates (1996)

Bhattacharya, A., Mawst, Luke J., Nayak, S., Li, J., Kuech, Thomas F.

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Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy (1996)

Huang, J.-W., Kuech, Thomas F., Hongqiang Lu, Bhat, I.

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Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy (1996)

Jian Ma, Garni, B., Perkins, N.R., O'Brien, W.L., Kuech, Thomas F., Lagally, Max G.

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Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs (1996)

Huang, J.-W., Bray, K.L., Kuech, Thomas F.

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Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide (1995)

Huang, J.-W., Kuech, Thomas F., Anderson, T.J.

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Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts (1995)

Chen, Charlie Chung-Ping, Chang, Y.A., Kuech, Thomas F.

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Changing photoluminescence intensity from GaAs/Al0.3Ga0.7As heterostructures upon chemisorption of SO2 (1995)

Geisz, J.F., Kuech, Thomas F., Ellis, A.B.

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PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition (1995)

Lin, C.-F., Chang, Y.A., Pan, N., Huang, J.-W., Kuech, Thomas F.

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Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation (1994)

Huang, J.-W., Kuech, Thomas F.

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Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources (1994)

Redwing, J.M., Kuech, Thomas F., Gordon, D.C., Vaartstra, B.A., Lau, S.S.

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Schottky enhancement of reacted NiAl/n-GaAs contacts (1994)

Chen, Charlie Chung-Ping, Chang, Y.A., Kuech, Thomas F.

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High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition (1994)

Chen, Charlie Chung-Ping, Chang, Y.A., Huang, J.-W., Kuech, Thomas F.

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Effects of temperature and oxygen concentration on the photoluminescence of epitaxial metalorganic vapor-phase epitaxy GaAs:O (1994)

Ryan, J.M., Huang, J.-W., Kuech, Thomas F., Bray, K.L.

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Recent advances in metal-organic vapor phase epitaxy (1992)

Kuech, Thomas F.

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Investigations of Schottky barrier structures in compound semiconductors: I. HgTe on CdTe: a lattice-matched Scottky barrier. II. Au-Cd barriers to CdTe. III. Au barriers on In(x)Ga(1-x)P (1981)

Kuech, Thomas F.

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. i) The Au Schottky barrier height to [...] was measured as a function of alloy...

Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates

Suryanarayanan, G., Khandekar, Anish A., Kuech, Thomas F., Babcock, Susan E.

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Oxygen-related defects in low phosphorous content GaAs1-yPy grown by metal organic vapor phase epitaxy

Cederberg, J.G., Bray, K.L., Kuech, Thomas F.

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