V. A. Shalygin

Nonlinear magneto-gyrotropic photogalvanic effect (2009)

Diehl, H., Shalygin, V. A., Golub, L. E., Tarasenko, S. A., Danilov, S. N., Bel'kov, V. V., ...

We report on the observation of nonlinear magneto-gyrotropic photogalvanic effect in HgTe/HgCdTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband...

Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures (2008)

Danilov, S. N., Wittmann, B., Olbrich, P., Eder, W., Prettl, W., Golub, L. E., ...

We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists...

Magneto-gyrotropic photogalvanic effects due to inter-subband absorption in quantum wells (2007)

Diehl, H., Shalygin, V. A., Danilov, S. N., Tarasenko, S. A., Bel'kov, V. V., Schuh, D., ...

We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of...

Terahertz luminescence in strained GaAsN:Be layers under strong electric fields. (2007)

Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Panevin, V. Y., Sofronov, A. N., Andrianov, A. V., ...

The authors report on the experimental studies of terahertz emission from strained GaAsN/GaAs microstructures doped with beryllium at the conditions of electric breakdown of the shallow impurity. The...

Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures (2006)

Shalygin, V. A., Diehl, H., Hoffmann, Ch., Danilov, S. N., Herrle, T., Tarasenko, S. A., ...

We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag...

Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules (2005)

Vorob'ev, L.E., Panevin, V.Y., Fedosov, N.K., Firsov, D.A., Shalygin, V.A., Andreev, A.A., ...

The engineering and properties of InAs quantum dot molecules in a GaAs matrix (2005)

Samsonenko, Y.B., Cirlin, G.E., Tonkikh, A.A., Polyakov, N.K., Krzyzhanovskaya, N., Ustinov, V.M., ...

Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules (2004)

Vorobjev, L.E., Panevin, V.Y., Fedosov, N.K., Firsov, D.A., Shalygin, V.A., Andreev, A., ...

Engineering of InAs quantum molecules in a GaAs matrix (2004)

Samsonenko, Y.B., Cirlin, G.E., Tonkikh, A.A., Polyakov, N.K., Kryzhanovskaya, N., Ustinov, V.M., ...

Optical properties of InAs/GaAs structures with doped quantum dot and artificial molecules (2004)

Firsov, D.A., Vorobjev, L.E., Panevin, V.Y., Fedosov, N.K., Shalygin, V.A., Andreev, A., ...

Far-Infrared Spontaneous Intraband Emission from Laser Structures with Quantum Dots and Quantum Wells (2002)

Vorobjev, L. E., Firsov, D. A., Shalygin, V. A., Tulupenko, V. N., Shernyakov, Yu M.

Spontaneous far-infrared radiation (Lambda = approx. 10 yo 20 micrometers) from laser structures with vertical coupled lnGaAs/AlGaAs quantum dots (QD) connected with intrasubband hole and electron...

Emission and Amplification of Mid-Infrared Radiation in Quantum Well Structures Under Generation of Near-Infrared Light (2002)

Vorobjev, L. E., Firsov, D. A., Shalygin, V. A., Tulupenko, V. N., Alferov, Z. L.

Physical principle of population inversion of electrons between subbands under the electron hole pair injection into the i-region of p-i-n heterostructure with quantum wells is proposed. The...

Photocurrent Under Carrier Tunneling in GaAs/AlGaAs coupled Quantum Wells Embedded in p-i-n Heterostructure (2002)

Vorobjev, L. E., Firsov, D. A., Shalygin, V. A., Titkov, I. E., Tomlinson, A. M.

Photocurrent-bias characteristics of coupled quantum well photodiode were studied at different intensities of illuminating light with various spectral range. The optimal conditions for observation of...

Optical Absorption and Birefringence in GaAs/AlAs MQW Structures Due to Intersubband Electron Transitions (2002)

Vorobjev, L. E., Danilov, S. N., Titkov, I. E., Firsov, D. A., Shalygin, V. A.

For the first time the electrooptical phenomena due to intersubband electron transitions were investigated in GaAs/AlAs MQW structures. These structures are purposed for creation a mid infrared laser...

Near and Mid Infrared Spectroscopy of InGaAs/GaAs Quantum Dot Structures (2002)

Shalygin, V. A., Vorobjev, L. E., Glukhovskoy, A. V., Danilov, S. N., Panevin, V. Yu.

Results of a photo- and electroluminescence study of vertically coupled in(o.5)Ga?0.5)As/GaAs quantum dot structures with extended waveguide (1.24 micrometers thick) are presented. Spectra of...

Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells (2002)

Aleshkin, V. Y., Gaponova, D. M., Revin, D. G., Vorobjev, L. E., Danilov, S. N., Panevin, V. Y., ...

Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells (2001)

Vorobjev, L. E., Danilov, S. N., Gluhovskoy, A. V., Zerova, V. L., Zibik, E. A., Panevin, V. Yu., ...

Optical phenomena in the mid-infrared range connected with interlevel and intersubband charge-carrier transitions in quantum dot and quantum well (QW) heterostructures under optical and electrical...