Performance modification of SiC MEMS (2009)
Niebelschütz, F., Brueckner, K., Cimalla, V., Hein, M.A., Pezoldt, J.
The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the...
Kolaklieva, L., Kakanakov, R., Stefanov, P., Cimalla, V., Maroldt, S., Ambacher, O., ...
Electrical, thermal and chemical properties of Ti/Al/Ti/Au ohmic contacts with different former Ti-Al ratio are investigated for application in GaN HEMTs. Lowest resistivity of 4.22x10(exp -5)...
King, P.D.C., Veal, T.D., Fuchs, F., Wang, C.Y., Payne, D.J., Bourlange, A., ...
The bulk and surface electronic structure of In2O3 has proved controversial, prompting the current combined experimental and theoretical investigation. The band gap of single-crystalline In2O3 is...
Carrier mass measurements in degenerate indium nitride (2009)
Pettinari, G., Polimeni, A., Capizzi, M., Blokland, J.H., Christianen, P.C.M., Maan, J.C., ...
We present photoluminescence measurements under intense magnetic fields (B up to 30 T) in n-doped indium nitride samples with carrier concentration ranging from about 7.5x10(17) cm(-3) to 5x10(18)...
Resonant piezoelectric ALGAN/GAN mems sensors in longitudinal mode operation (2009)
Brueckner, K., Niebelschütz, F., Tonisch, K., Stephan, R., Cimalla, V., Ambacher, O., ...
Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates using a semiconductor fabrication process. To realize the back electrode for the piezoelectric active...
Himmerlich, M., Koufaki, M., Ecke, G., Mauder, C., Cimalla, V., Schaefer, J.A., ...
Indium-tin-oxynitride (ITON) films have been fabricated by rf sputtering from an indium-tin-oxide target in nitrogen plasma. The influence of postdeposition annealing up to 800 °C is analyzed by...
Transport properties of InN: Elektronische Transporteigenschaften von InN (2009)
Cimalla, V., Lebedev, V., Ambacher, O., Polyakov, V.M., Schwierz, F., Niebelschütz, F., ...
Knübel, A., Aidam, R., Cimalla, V., Kirste, L., Baeumler, M., ...
We report on the PAMBE-growth of high-quality InN layers with In polarity and on the influence of growth parameters such as Indium-to-nitrogen flux ratio as well as substrate temperature on the...
Sillero, E., Williams, O.A., Lebedev, V., Cimalla, V., Nebel, C.E., ...
We present the static and dynamic mechanical characterization of several nanocrystalline diamond (NCD) freestanding micromachined structures. NCD films, fabricated by microwave plasma chemical vapour...
Buchheim, C., Goldhahn, R., Gobsch, G., Tonisch, K., Cimalla, V., Niebelschütz, F., ...
Ga-face GaN/AlGaN/GaN heterostructures with different cap thicknesses are investigated by electroreflectance spectroscopy (ER). The voltage dependent electric field strengths of the barrier and cap...
Experimental evidence of different hydrogen donors in n-type InN (2008)
Pettinari, G., Masia, F., Capizzi, M., Polimeni, A., Losurdo, M., Bruno, G., ...
The multiform donor nature of hydrogen in n-type indium nitride is experimentally observed in samples exposed to atomic hydrogen. Photoluminescence measurements reveal a tenfold increase in the...
Nanomechanics of Single Crystalline Tungsten Nanowires (2008)
Cimalla, V., Pezoldt, J., Niebelschütz, M., Ambacher, O., Brückner, K., ...
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide (2008)
Wang, C.Y., Dai, Y., Pezoldt, J., Lu, B., Kups, T., Cimalla, V., ...
We report on the phase stabilization of rhombohedral (rh-) In2O3 films on sapphire substrate deposited by metal organic chemical vapor deposition. With the help of a high-temperature nucleation layer...
Electronic and photoconductive properties of ultrathin InGaN photodetectors (2008)
Lebedev, V., Polyakov, V.M., Hauguth-Frank, S., Cimalla, V., Ecke, G., ...
We report on the compositional dependencies of electron transport and photoconductive properties for ultrathin metal-semiconductor-metal photodetectors based on In-rich In(x)Ga(1-x)N alloys. For a...
Highly efficient THz emission from differently grown InN at 800 nm and 1060 nm excitation (2008)
Matthäus, G., Cimalla, V., Pradarutti, B., Riehemann, S., Notni, G., Lebedev, V., ...
A detailed study on differently molecular-beam epitaxy (MBE) grown InN wavers as THz surface emitters is reported. The samples were excited using 120 fs and 100 fs short laser pulses delivered by a...
Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures (2008)
Tonisch, K., Buchheim, C., Niebelschütz, F., Schober, A., Gobsch, G., Cimalla, V., ...
A detailed analysis of the piezoelectric response of (GaN/)AlGaN/GaN heterostructures is reported. The electromechanical properties of two types of heterostructures with an Al content of 31% are...
Brueckner, K., Niebelschütz, F., Tonisch, K., Michael, S., Dadgar, A., Krost, A., ...
Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates. The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act...
Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD (2008)
Wang, C.Y., Cimalla, V., Kups, T., Ambacher, O., Himmerlich, M., Krischok, S.
High sensitive ozone sensors working at room temperature were demonstrated based on In2O3 nanoparticles, which were deposited by metal organic chemical vapor deposition (MOCVD). The resistance of the...
(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors (2008)
Wagner, J., Wang, C.Y., Maier, M., Kunzer, M., Passow, T., ...
There is high demand for compact low-cost ozone (O3) sensors. It has been shown that indium oxide (In2O3) thin films grown by metal-organic vapor-phase epitaxy (MOVPE) act as an O3 sensitive...
Integration of thin-film-fracture-based nanowires into microchip fabrication (2008)
Jebril, S., Elbahri, M., Titazu, G., Subannajui, K., Essa, S., Niebelschutz, F., ...
One-step device fabrication through the integration of nanowires (NWs) into silicon microchips is still under intensive scientific study as it has proved difficult to obtain a reliable and...
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication (2008)
Niebelschütz, F., Pezoldt, J., Stauden, T., Cimalla, V., Tonisch, K., Brueckner, K., ...
High efficient terahertz emission from InN surfaces (2007)
Cimalla, V., Pradarutti, B., Matthäus, G., Brückner, C., Riehemann, S., Notni, G., ...
Terahertz radiation was measured from InN and compared to p-InAs excited by femtosecond optical pulses at 1060 and 800 nm. At 800 nm, atomically smooth InN with low background electron concentration...
Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes (2007)
Cimalla, V., Kups, T., Stauden, T., Ambacher, O., ...
There is a high demand for compact low-cost ozone sensors. It has been shown recently that In2O3 nanolayers can act as ozone sensitive films activated at room temperature by ultraviolet light. In the...
Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres (2007)
Tonisch, K., Weise, F., Stubenrauch, M., Cimalla, V., Ecke, G., Will, F., ...
Analysis of nanostructures by means of auger electron spectroscopy (2007)
Ecke, G., Cimalla, V., Tonisch, K., Lebedev, V., Romanus, H., Ambacher, O., ...
In modern nanotechnology analysis such methods are needed which are able to investigate extremely small volumes, thus surface sensitive techniques with a high spatial and depth resolution. Concerning...
Cimalla, V., Pezoldt, J., Ambacher, O.
With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting...
InN as THz emitter excited at 1060 nm and 800 nm (2006)
Pradarutti, B., Matthäus, G., Brückner, C., Riehemann, S., Notni, G., Cimalla, V., ...
The applicability of moth-eye structures to THz components is investigated. With the help of RCWA and effective medium theory, optimal structural parameters for one-dimensional and two-dimensional...
Electromechanical resonances of SiC and AlN beams under ambient conditions (2005)
Brueckner, K., Förster, Ch., Tonisch, K., Cimalla, V., Ambacher, O., Stephan, R., ...
MEMS resonators offer great potential for RF sensor and filter applications. A semiconductor process has been used to prepare SiC and AlN beam resonators. The metallised beams are excited by an RF...
A novel class of sensors for micro- and nanofluidic systems in biotechnological applications. (2005)
Schober, A., Kittler, G., Lübbers, B., Buchheim, C., Majdeddin, A., Cimalla, V., ...
7.Dresdner Sensor Symp., Dresden, 12.-15.Dezember 2005
A novel class of sensors for system integrative concepts in biotechnological applications. (2004)
Schober, A., Kittler, G., Buchheim, C., Majdeddin, A., Cimalla, V., Fischer, M., ...
Beckmann, D. [Hrsg.]
Characterization of Buffer Layers for SiC CVD (1995)
Cimalla, V., Pezoldt, J., Ecke, G., Rößler, H., Eichhorn, G.
Silicon Carbide has been grown by rapid thermal carbonization of (100) and (111) Si surfaces at atmospheric pressure using 1 lpm hydrogen (H2) as a carrier gas and propane (C3H8) with concentrations...
Characterization of Buffer Layers for SiC CVD (1995)
Cimalla, V., Pezoldt, J., Ecke, G., Rößler, H., Eichhorn, G.
Silicon Carbide has been grown by rapid thermal carbonization of (100) and (111) Si surfaces at atmospheric pressure using 1 lpm hydrogen (H2) as a carrier gas and propane (C3H8) with concentrations...
Characterization of Buffer Layers for SiC CVD (1995)
Cimalla, V., Pezoldt, J., Ecke, G., Rößler, H., Eichhorn, G.
Silicon Carbide has been grown by rapid thermal carbonization of (100) and (111) Si surfaces at atmospheric pressure using 1 lpm hydrogen (H2) as a carrier gas and propane (C3H8) with concentrations...