Terahertz Raman laser based on silicon doped by phosphorus (2008)
Hübers, Heinz-Wilhelm, Pavlov, Sergei G., Böttger, Ute, Zhukavin, Roman Kh., Shastin, V.N., Hovenier, N., ...
Raman-type simulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Stokes shift of 3.16 THz...
Zhukavin, R. Kh., Tsyplenkov, V. V., Kovalevsky, K. A., Shastin, V. N., Pavlov, S. G., Böttger, U., ...
The effect of uniaxial stress on terahertz stimulated emission from phosphor and antimony donors in silicon excited by CO2 laser radiation was studied. The laser action originates from 2p0 → 1s...
Terahertz gain on shallow donor transitions in silicon (2007)
Zhukavin, R.Kh., Shastin, V.N., Hübers, Heinz-Wilhelm, Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., ...
Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a...
Terahertz Silicon Lasers (2006)
Hübers, Heinz-Wilhelm, Pavlov, S.G., Shastin, V.N.
Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability...
Stimulated terahertz stokes emission of silicon crystals doped with antimony donors (2006)
Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., Carder, D.A., Phillips, P.J., ...
Silicon-based Brillouin-type terahertz laser (2006)
Pavlov, S G, Hovenier, J N, Klaassen, T O, Carder, D A, Phillips, P J, ...
Stimulated terahertz stokes emission of silicon crystals doped with antimony donors (2006)
Pavlov, S G, Hovenier, J N, Klaassen, T O, Carder, D A, Phillips, P J, ...
Terahertz lasers based on germanium and silicon (2005)
Hübers, H-W., Pavlov, S. G., Shastin, V. N.
Recent experimental and theoretical results of impurity doped germanium and silicon terahertz lasers are reviewed. Three different laser mechanisms exist in p-type germanium. Depending on the...
D centers in intracenter Si:P lasers (2005)
Zhukavin, R.Kh., Pavlov, S.G., Kovalevsky, K.A., Riemann, H., Shastin, V.N.
Frequency Tunable Terahertz Silicon Laser (2005)
Hübers, Heinz-Wilhelm, Pavlov, Sergej G., Hovenier, J.N., Klaassen, T.O., Carder, D., Zhukavin, R.Kh., ...
Nonequilibrium electron distribution in terahertz intracentre silicon lasers (2004)
Pavlov, S.G., Orlova, E.E., Zhukavin, R.Kh., Shastin, V.N.
Optical excitation of shallow donor centres in silicon creates an inverted electron distribution on the Coulomb centres at low lattice temperature. The population inversion is formed due to the...
Stimulated terahertz emission from arsenic donors in silicon (2004)
Pavlov, S.G., Riemann, H., Abrosimov, N.V., Zhukavin, R.Kh., Shastin, V.N.
Stimulated emission has been obtained from intra-center donor transitions in silicon monocrystals doped by arsenic. The Si:As laser was optically excited by radiation from a CO2 laser. The emission...
Thz Silicon Lasers Based On Impurity State Transitions (2004)
Shastin, V.N., Pavlov, S.G., Zhukavin, R.Kh., Bekin, N.A.
The operating principles and recent results on THz lasers based on intracenter optical transitions of shallow donors in silicon under optical excitation are reviewed. The aspects of THz lasing from...
Generation of THz emission from donor centers in silicon under intracenter optical pumping (2004)
Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., Carder, D., Zhukavin, R.Kh., ...
Optical pumping of excited donor states in silicon crystals doped by antimony, phosphor, arsenic and bismuth impurity center by emission from a free electron laser yields stimulated terahertz...
Gain in Silicon Lasers Based on Shallow Donor Transitions (2004)
Zhukavin, R.Kh., Pavlov, S.G., Hovenier, J.N., Klaassen, T.O., ...
The results of gain measurements for THz silicon lasers based on shallow donor intracenter optical transitions are presented. The experiments were performed unter optical excitation of neutral donor...
Optically pumped terahertz semiconductor bulk lasers (2003)
Pavlov, S.G., Orlova, E.E., Zhukavin, R.Kh., Riemann, H., Nakata, H., ...
The principles of stimulated emission for the terahertz frequency range from shallow impurity centers in bulk semiconductors are discussed. Evidence of stimulated emission from group V donors...
Laser transitions under resonant optical pumping of donor centres in Si:P (2003)
Zhukavin, R.Kh., Gaponova, D.M., Muravjov, A.V., Orlova, E.E., Shastin, V.N., Pavlov, S.G., ...
Silicon lasers based on shallow donor centres (2003)
Shastin, V.N., Orlova, E.E., Zhukavin, R.Kh., Pavlov, S.G., Riemann, H.
Terahertz Silicon Lasers: Intracentre optical pumping (2003)
Pavlov, S.G., Rümmeli, M.H., Hovenier, J.N., Klaassen, T.O., Zhukavin, R.Kh., ...
Far-infrared stimulated emission from optically excited bismuth donors in silicon (2002)
Pavlov, S.G., Rümmeli, M.H., Orlova, E.E., Shastin, V.N., ...
The emission spectra of optically pumped Si-based THz lasers (2002)
Klaassen, T. O., Hovenier, J. N., Zhukavin, R. Kh., Gaponova, D. M., Muravjov, A. V., Orolova, E. E., ...
Optically pumped terahertz silicon lasers (2002)
Pavlov, S. G., Zhukavin, R. Kh., Orlova, E. E., Riemann, H., Shastin, V. N.
Terahertz Emission Spectra of Optically Pumped Silicon Lasers (2002)
Pavlov, S. G., Greiner-Bär, M., Rümmeli, M. H., Kimmitt, M. F., Zhukavin, R. Kh., ...
Terahertz optically pumped Si:Sb laser (2002)
Pavlov, S. G., Riemann, H., Zhukavin, R. Kh., Orlova, E. E., Shastin, V. N.
Far Infrared Phenomena in P-Type MQW Heterostructures Under Lateral Electric Field (2002)
Shastin, V. N., Aleshkin, V. Y., Bekin, N., Zhukavin, R., Zvonkov, B. N.
Experimental investigation of the far-infrared (FIR) optical properties connected with intersubband and impurity-to-2D subband states transitions of holes in MQW ln(x)%Ga(1-x)As/GaAs and...
The physics of optically pumped semiconductor bulk lasers for the 5-15 THz frequency range (2001)
Pavlov, S.G., Rümmeli, M.H., Shastin, V.N., Zhukavin, R.Kh., Orlova, E.E., ...
The physics of optically pumped semiconductor bulk lasers for the 5-15 THz (2001)
Pavlov, S.G., Rümmeli, M.H., Shastin, V.N., Zhukavin, R.Kh., Orlova, E.E., ...
The physics of optically pumped semiconductor bulk lasers for the 5-15 THz (2001)
Pavlov, S.G., Rümmeli, M.H., Shastin, V.N., Zhukavin, R.Kh., Orlova, E.E., ...
FIR lasing based on group V donor transitions in silicon (2001)
Orlova, E.E., Pavlov, S.G., Zhukavin, R. Kh., Shastin, V. N., Kirsanov, A.V., ...
The physics of optically pumped semiconductor bulk lasers for the 5-15 THz (2001)
Pavlov, S.G., Rümmeli, M.H., Shastin, V.N., Zhukavin, R.Kh., Orlova, E.E., ...
Terahertz emission from silicon doped by shallow impurities (2001)
Pavlov, S. G., Rümmeli, M. H., Zhukavin, R. Kh., Orlova, E. E., Riemann, H., ...
The p-Ge terahertz laser-properties under pulsed- and mode-locked operation (2000)
Niels Hovenier, J., Carmen Diez, M., Klaassen, T.O., Wenckebach, W.T., Muravjov, A.V., Pavlov, S.G., ...
Stimulated Emission from Donor Transitions in Silicon (2000)
Pavlov, S.G., Zhukavin, R.Kh., Orlova, E.E., Shastin, V.N., Kirsanov, A.V., ...
Population inversion and far-infrared emission from optically pumped silicon (2000)
Auen, K., Rümmeli, M., Pavlov, S.G., Zhukavin, R. Kh., Orlova, E. E., ...
Si-based far-infrared lasers (2000)
Shastin, V.N., Zhukavin, R. Kh., Orlova, E.E., Pavlov, S.G., Kirsanov, A. V., ...
Population Inversion and Far-Infrared Emission from Optically Pumped Silicon (1999)
Auen, K., Pavlov, S.G., Orlova, E.E., Zhukavin, R.Kh., Shastin, V.N.