Influence of Initial MBE Growth Stage on Properties of Hexagonal InN/Al2O3 Films (2002)
Mamutin, V. V., Vekshin, V. A., Davydov, V. Y., Ratnikov, V. V., Emtsev, V. V.
The InGaN alloys have acquired a lot of interest for using in the active region of light emitting and lasers diodes as the band gap of these materials can be varied over nearly the whole visible...
Kolmakov, A. G., Shmidt, N. M., Emtsev, V. V., Kryzhanovsky, A. D., Lundin, W. V.
The first successful results of multifractal analysis application to a quantitative description of mosaic structure peculiarities which are typical of GaN epitaxial layer with hexagonal modification...
Shallow donors in silicon coimplanted with rare-earth ions and oxygen (2001)
Emtsev Jr., V.V., Ammerlaan, C.A.J., Andreev, B.A., Oganesyan, G.A., Poloskin, D.S., Sobolev, N.A.
A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon, (1999)
Emtsev, V., Emtsev Jr., V.V., Poloskin, D.S., Shek, E.I., Sobolev, N.A.
Impurity effects in silicon implanted with rare-earth ions, (1999)
Emtsev, V., Emtsev Jr., V.V., Poloskin, D.S., Shek, E.I., Sobolev, N.A., Michel, J., ...
Oxygen and erbium related donor centers in Czochralski grown silicon implanted with erbium, (1999)
Emtsev, V., Emtsev Jr., V.V., Poloskin, D.S., Shek, E.I., Sobolev, N.A., Michel, J., ...