Zeitraum
2001 - 2001
Anzahl
1
Co-Autoren
Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys, Lett. 76, 1585 (2000)] (2001)
Afanas'eva, VV, Stesmans, André; U0014266 ;, Bassler, M, Pensl, G, Schulz, MJ
Katholieke Universiteit Leuven, Faculteit Wetenschappen, Departement Natuurkunde en Sterrenkunde, Celestijnenlaan 200D, 3001 Leuven