An ion track based approach to nano- and micro-electronics (2008)
Hoppe, K, Fahrner, W. R., Fink, D, Dhamodoran, S, Petrov, A, Chandra, A, ...
Since a decade the concept emerged to use conducting ion tracks in nano- and micro-electronics, due to their small dimensions. Whereas in a few cases the ion tracks themselves are already conducting,...
Simoen, Eddy, Rafi, J.M, Clauws, P, Job, R, ...
DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon (2005)
Simoen, Eddy, Job, R, Ma, Y, Düngen, W, ...
Hydrogen-plasma-enhanced thermal donor formation in n-type high-ressitivity MCZ silicon (2005)
Huang, Y.L, Rafi, J.M, Job, R, Fahrner, W.R, ...
Job, R, Simoen, Eddy, Ma, Y, Dungen, W, ...
Job, R, Ulyashin, A.G, Fahrner, W.R, Tonelli, G, ...
Analysis of oxygen thermal donor formation in n-type CZ silicon (2003)
Simoen, Eddy, Ulyashin, A.G, Job, R, Fahrner, W.R, ...
Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon (2002)
Simoen, Eddy, Ulyashin, A.G, Job, R, Fahrner, W.R, ...
Low temperature doping of silicon by hydrogen plasma treatments (2002)
Ulyashin, A.G, Ma, Y, Fahrner, W.R, Simoen, Eddy, Rafi, Joan Marc, ...
Job, R, Ulyashin, A.G, Fahrner, W.R, De Gryse, O, ...
The behaviour of oxygen in oxygenated n-type high-resistivity float-zone silicon (2002)
Job, R, Ulyashin, A. G, Fahrner, W. R, Tonelli, G, ...
Denisenko, A.V., Fahrner, W.R., Henschel, H., Job, R., Strähle, U.
Double-junction p-i-p diodes are fabricated on natural and synthetic diamond crystals and polycrystalline CVD diamond films and subjected to gamma, electron and neutron exposure. Parameters of the...
Surface modification of diamond irradiated with swift heavy ions (1995)
Didyk, A Yu, Fahrner, W R, Fries, T, Rusetskii, M S, Varichenko, V S, Zaitsev, A M
Comparison of lifetime measurements from the Zerbst and the dispersion techniques. (1993)
Klausmann, E., Fahrner, W.R., Löffler, S., Neitzert, H.C.
The admittance of metal oxide semiconductor (MOS) diode after switching from inversion to deep depletion is calculated. Special attention is given to the final stationary state in inversion...
The intrinsic states and fixed charges of the Si-SiO2 interface. (1989)
Klausmann, E., Fahrner, W.R., Bräunig, D.
The four types of charges currently encountered in the Si-SiO sub 2 structure are first re-defined and the presently recommanded terminology and symbolism given. The interface states can exchange...
The electronic states of the Si-SiO2 interface. (1989)
Klausmann, E., Fahrner, W.R., Bräunig, D.
The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phenomena encountered both in bipolor and FET devices, and described at length in Chaps. 14 and 15...
Electrical characterization of buried layers in silicon. (1988)
Buried layers of two types are discussed, namely as produced by "external" and "internal" means (ion implantation and formation of a denuded zone, respectively). Results of the following...