FAILURE MECHANISMS IN SILICON SEMICONDUCTORS. (2005)
Queisser,H., Scarlett,R., Schroen,W., Hooper,W.
Presented are investigations of two failure mechanisms: (1) second breakdown in silicon power transistors, and (2) studies of electrical charge on oxides protecting reverse biased silicon p-n...
FAILURE MECHANISMS IN SILICON SEMICONDUCTORS. (2005)
Queisser,H., Schroen,W., Hooper,W.
The surface studies show that there is motion of charge horizontally on the oxide covering planar silicon junctions. There is insignificant dipole action and diffusion through the oxide under normal...
FAILURE MECHANISMS IN SILICON SEMICONDUCTORS. (2005)
Investigations were made of thermal instability in silicon power transistors, and the related phenomena of hot spots and second breakdown. The theory of the thermal instability problem is presented....
FAILURE MECHANISMS IN SILICON SEMICONDUCTORS. (2005)
SCHROEN,W., Hooper,W. W., Queisser,H. J.
Investigations were made of surface phenomena on oxideprotected silicon devices. The problem of surface breakdown is considered. Surface breakdown voltage can be altered by supplying charge to...
RELIABILITY PHYSICS STUDIES ON TRANSISTORS. (1998)
Schroen, W., Woodruff, R., Farrington, D., Van Loon, P. G. G.
This report is divided into two main sections, both concerned with reliability physics studies on transistors. The first part describes investigations of two surface failure modes, namely surface...