Weinreich, W., Wilde, L., Kücher, P., Lemberger, M., Yanev, V., Rommel, M., ...
Tunneling atomic force microscopy \'01TUNA\'02 is used to identify leakage current characteristics in SiO2 doped ZrO2 thin films within the nanometer scale. TUNA current maps and local TUNA I-V...
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition (2009)
Müller, J., Böscke, T.S., Schröder, U., Reinicke, M., Oberbeck, L., Zhou, D., ...
A broad compositional range of the dielectric material Zr1-xHfxO2 was evaluated with respect to its applicability in DRAM storage capacitors. The paper reports on phase composition, crystallization...
Weinreich, W., Reiche, R., Lemberger, M., Jegert, G., Müller, J., Wilde, L., ...
Polarity asymmetries in JSV and CSV characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr(1\'02x)AlxO2 films and TiN electrodes are evaluated. Physical analysis of the...
Weinreich, W., Ignatova, V.A., Wilde, L., Teichert, S., Lemberger, M., Bauer, A.J., ...
The influence of the annealing atmosphere and temperature on the crystalline phase and composition of thin ZrO2 layers grown by atomic layer deposition on silicon is analyzed. These physical...
Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., ...
High-k dielectric layers (HfSixOy and ZrO2) with different film morphologies were investigated by tunneling atomic-force microscopy (TUNA). Different current distributions were observed for amorphous...