E-MRS IUMRS ICEM 2006 Spring Meeting (2007)
Napolitani, Enrico, Kuznetsov, Andrej, Skorupa, Wolfgang, Foad, Majeed
Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors (2006)
Potfajova, Jaroslava, Sun, Jiaming, Schmidt, Bernd, Dekorsy, Thomas, Skorupa, Wolfgang, Helm, Manfred
Light emitting pn-diodes were fabricated on a 5.8 μm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of...
Bright green electroluminescence from Tb 3+ in silicon metal-oxide-semiconductor devices (2005)
Sun, Jiaming, Skorupa, Wolfgang, Dekorsy, Thomas, Helm, Manfred, Rebohle, Lars, Gebel, Thoralf
Bright green electroluminescence with luminance up to 2800 cd/m² is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal...
Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet (2005)
Skorupa, Wolfgang, Sun, Jiaming, Prucnal, Slawomir, Rebohle, Lars, Gebel, Thoralf, Nazarov, Alexei N., ...
Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were created into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS)...
Efficient silicon based light emitters (2005)
Helm, Manfred, Sun, Jiaming, Potfajova, Jaroslava, Dekorsy, Thomas, Schmidt, Bernd, Skorupa, Wolfgang
Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs...
Light-emitting silicon pn diodes (2004)
Dekorsy, Thomas, Sun, Jiaming, Skorupa, Wolfgang, Schmidt, Bernd, Helm, Manfred
We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature...
Silicon-based electrically driven microcavity LED (2004)
Potfajova, Jaroslava, Sun, Jiaming, Winnerl, Stephan, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, ...
A silicon pn-diode was embedded into a microcavity composed of a buried metal silicide as bottom reflector and a Si/SiO2 Bragg mirror as top reflector. Spectral narrowing and an increased intensity...
Sun, Jiaming, Skorupa, Wolfgang, Dekorsy, Thomas, Helm, Manfred, Rebohle, Lars, Gebel, Thoralf
Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd/Si metaloxidesemiconductor structure. The SiO2:Gd active layer is...
Sun, Jiaming, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, Mücklich, Arndt, Helm, Manfred
The origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied in silicon pn diodes prepared by boron implantation. The two peaks are related to the formation of p-type doping...
Bound-exciton-induced current bistability in a silicon light-emitting diode (2003)
Sun, Jiaming, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, Helm, Manfred
A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity...
Sun, Jiaming, Dekorsy, Thomas, Skorupa, Wolfgang, Schmidt, Bernd, Helm, Manfred
Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the...
Hensel, Eberhard., Skorupa, Wolfgang.
Berlin, Akad. d. Wiss. d. DDR, Diss. A, 1985 (Nicht f.d. Austausch).